Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

p-channel thin-film transistors based on spray-coated Cu2O films

“…20 These results emphasize Cu 2 O as one of the promising choices for p-channel components in oxide electronics. In order to prepare Cu 2 O thin film, the most straightforward way is the controlled oxidation of a precursor Cu layer 21,22 or using more advanced variations such as radical oxidation by O 2 plasma, 23 all of which are simple methods that could produce good quality Cu 2 O films. However, for device fabrication, the need to obtain high fieldeffect mobility along with the multiple-phase nature of Cu-O material system (Cu, Cu 2 O, and CuO) have led to the focus on complex vacuum-based deposition techniques such as pulsedlaser deposition (PLD) 14,24 and sputtering 25,26 with the aim to produce single-phase, high-quality Cu 2 O films for transistor applications.…”

Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

“…It has been observed by Zang that optical bandgap energy of Cu 2 O can be tuned from 1.69 to 2.42 eV. 8 Attempts to obtain p-Cu 2 O/n-ZnO junctions similar to the present ones may result in tunable LEDs. Because of the narrow bandgap of GaAs in comparison to that of ZnO, the emitted light energy coming from the active ZnO layer is greater than the bandgap of GaAs and is absorbed by the substrate.…”

“…1 Owing to its high exciton binding energy (63 meV), 2 it is of importance for optoelectronic applications. Recently, due to its potential applications such as light emitting diodes (LEDs), 3 photodiodes, 4 gas sensors, 5 nanolasers, 6 nanowire-LEDs 7 and heterojunction solar cells, 8 ZnO material has been given much attention. In spite of much progress in forming ZnO material, it is hard to achieve high quality and reproducible p-ZnO.…”

Diamond-based electrodes for organic photovoltaic devices

“…Notably, the Fano resonance just quenches the diamond line and does not mean a worsening of diamond quality. Raman spectra of boron-doped diamond layers grown with different amounts of TMB (4,8,12) and for different deposition times (2,3,4). The spectra were excited by 488 nm laser radiation and offset for clarity.…”

“…One of the advantages of the PECVD technique is the possibility to operate on a large variety of substrates at low deposition temperatures, which can be a crucial condition in the manufacture of semiconductors. With respect to photovoltaic devices, light-harvesting materials can be directly manufactured by the PECVD process [7,8]. Diamond is recognized to be a remarkable material due to its particularly attractive properties combining chemical resistance, optical transparency, thermal conductivity [9][10][11][12][13], and electrochemical properties [14][15][16][17][18].…”