Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

Köç, P.; Tekmen, Süleyman; Baltakesmez, Ali; Tüzemen, Sebahattin; Meral, Kadem; Onganer, Yavuz

doi:10.1063/1.4842635

Cited by 17 publications

(4 citation statements)

References 46 publications

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“…These band offset values are very important in the fabrication of a proper heterojunction as it controls the variation of V OC and J SC . The band offset value for holes is found to be approximately eight times higher than the barrier for electrons [52]. According to this, the electron injection from n-AZO through i-ZnO into the p-CZTS is greater than the hole injection from p-CZTS into n-AZO through i-ZnO.…”

Section: Photovoltaic Properties Of Czts/azo Hetero-junctionmentioning

confidence: 78%

Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

Aabel

Anupama

Kumar

2023

Semicond. Sci. Technol.

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The quaternary chalcogenide material Cu2ZnSnS4 (CZTS) has received much attention owing to its excellent photovoltaic conversion properties. We report the deposition of CZTS thin films by vacuum spray pyrolysis and explore the structural, elemental, optical and electrical properties and its use as an absorber layer in the fabrication of a cadmium free solar cell device. The thin films were deposited at various substrate temperatures ranging from 325° C to 400° C using vacuum spray pyrolysis technique. Structural analysis shows crystalline nature with a CZTS kësterite phase formed at 375 °C. FESEM analysis reveals the presence of coral reef like morphology. XPS measurements were carried out to confirm the elemental composition. Uv-vis measurments indicate that the optical band gap of the as-deposited films is 1.5 eV with a high absorption coefficient of 105cm-1, which is close to the ideal value for an absorber layer. Hall effect measurement confirms the p-type nature of the samples. A simple heterojunction is fabricated with a device structure <ITO/Al:ZnO/CZTS/Ag> using CZTS as the absorber layer and Al:ZnO as the window layer. The solar cell parameters estimated are, Voc = 0.85 V, Isc= 16.68 mA, Fill factor = 36.54 % and Efficiency, ɳ = 2.87 %.

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Section: Photovoltaic Properties Of Czts/azo Hetero-junctionmentioning

confidence: 78%

Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

Aabel

Anupama

Kumar

2023

Semicond. Sci. Technol.

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“…Therefore, these results suggest that the crystal growth direction of zirconium oxide films depends on the Ar partial pressure. The grain size (D) of the ZrO 2 films was estimated by using Debye-Scherrer's Formula [29]…”

Section: X-ray Diffraction Studiesmentioning

confidence: 99%

Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Bakacak

Gür

Bayram

et al. 2021

J Mater Sci: Mater Electron

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In this study, Zirconium Oxide (ZrO 2 ) thin films were produced by using radio frequency magnetron sputtering method on glass substrate at various pressures. The effects of growth pressure on the characteristics of grown Zirconia nanostructures were investigated by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Uv-Visible Spectroscopy and Photoluminescence Spectrometry (PL). XRD analysis showed that peaks of the monoclinic and tetragonal phases were more effective at low growth pressure, but different monoclinic phase peaks were present at increasing growth pressures. The surface morphological properties of the films such as average and maximum roughness, changed significantly with increasing growth pressure, and the maximum peak height first increased to 40 nm and then decreased to 20 nm. The optical transmittance of these thin films was examined in the 450-1100 nm wavelength range, covering both the visible and near-infrared spectral range, and it was found to be approximately 95% at 550 nm wavelength, and the optical band gaps were calculated to be approximately 3.26 eV by PL analyses. Uv-Visible spectroscopy analysis showed that the refractive index of the Zirconia films decreases from 2.09 to 1.79 with increasing wavelength of the incident photon. ZrO 2 thin films are considered potential materials for transparent electronic devices because of their high transmittance value.

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“…Great efforts have been made to integrate epitaxial functional oxides with III-V semiconductor GaAs because of their widely promising applications (Liu et al, 2003;Ueda et al, 2006;Zheng et al, 2006;Wei et al, 2011;Köç et al, 2013;Galatage et al, 2014;Mazet et al, 2015;Lee, 2016;Kornblum et al, 2017;Zhou et al, 2017;Young et al, 2019;Verhulst et al, 2020;Zhou et al, 2020;Dalal et al, 2021). But there still exists some challenges for fabricating functional-oxide/GaAs heterostructures with excellent interfacial quality, such as the large lattice mismatch and interdiffusion of As and Ga atoms.…”

Section: Introductionmentioning

confidence: 99%

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Zhou

Deng

et al. 2022

Front. Mater.

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The integration of metal oxides and GaAs semiconductors is quite attractive for its potential applications, but interfacial diffusion and lattice mismatch usually cause huge challenges toward achieving high-performance electronic devices. In this article, we reported a thin layer of epitaxial TiO2 (110) on a GaAs (001) substrate with significant compressive strain, lattice distortion, and oxygen vacancies, where the oxygen vacancies proved to be the critical factor to induce the compressive strain and lattice distortion. In this case, the lattice mismatches between this compressed TiO2 (110) and GaAs (001) surface were calculated to be as small as 1.3 and 0.24% along the [110] and [001] orientations of TiO2, respectively. Further, no Ga-oxides or As-oxides were found at the interface, indicating that the TiO2 layer inhibited the diffusion of Ga and As atoms effectively. In summary, TiO2 film can be grown epitaxially on GaAs (001) substrates with non-negligible compressive strain, lattice distortion, oxygen vacancies, and a high-quality interface. This study also provides an approach to integrate different functional oxides on TiO2-buffered GaAs for various GaAs-based electronic devices with higher reliability and performance.

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Stimulated electroluminescence emission from n-ZnO/p-GaAs:Zn heterojunctions fabricated by electro-deposition

Cited by 17 publications

References 46 publications

Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells

Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

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