Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

Hwang, Joon; Lai, Zhca Yong; Wu, Ching Yuan; Chang, Shoou Jinn

doi:10.1143/jjap.44.1726

Cited by 7 publications

(4 citation statements)

References 14 publications

(18 reference statements)

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“…Therefore, in order to simplify the analysis the pGaN doping included in the TCAD model is fully ionized. However, this does not fully consider that part of the Mg atoms may be passivated by Hydrogen(H) atoms 20 or that self-compensation may occur due to deep donor states attributed to Nitrogen(N) vacancies 21 . Nevertheless, it has been reported in literature that for [Mg]<3x10 19 cm -3 a doping efficiency in excess of 70% with a maximum net acceptor concentration of 1.8x10 19 cm -3 can be achieved 11 .…”

mentioning

confidence: 99%

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Efthymiou

Longobardi

Camuso

et al. 2017

Applied Physics Letters

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In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

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confidence: 99%

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Efthymiou

Longobardi

Camuso

et al. 2017

Applied Physics Letters

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“…As shown in figure 2, a clear reduction of ρ c and resistivity are observed with increased Ga BEP. With Ga BEP increased to 2.2×10 −7 Torr, ρ c and the resistivity reduced to 1.3×10 −4 Ω cm 2 and 0.5 Ω cm, respectively, which are lower than those typically achieved in conventional p-GaN [5][6][7][8]. However, it is known that an increased Ga BEP can result in the formation of polycrystalline clusters embedded in the amorphous matrix [2].…”

Section: Properties Of Gan 1−x As X Layermentioning

confidence: 85%

“…2, with Ga BEP increased to 2.2×10 -7 Torr, ρ c and resistivity reduce to 1.3×10 -4 Ω-cm 2 and 0.5 Ω-cm, respectively, which are lower than those typically achieved in p-GaN. [5][6][7][8] . However, it is known that an increased Ga BEP can result in the formation of poor quality polycrystalline clusters 2 which is also shown in the transmission electron microscopy (TEM) images in Fig.…”

mentioning

confidence: 80%

Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes

Qian¹,

Lee²,

Vajargah³

et al. 2016

Semicond. Sci. Technol.

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The structural properties and electrical conduction mechanisms of p-type amorphous GaN 1-x As x /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm -3 is achieved which allows a specific contact resistance of 1.3×10 -4 Ω-cm 2 . An increased gallium beam equivalent pressure during growth allows reduced resistivity but can result in the formation of a polycrystalline structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V)show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias (<0.3 V) and becomes recombination dominated at higher reverse bias.GaN-based PN diodes are attractive for power electronic applications due to the high breakdown field and low power loss and are likely to play an important part in supporting the required large voltages in vertical power devices. However, achieving a high hole concentration (>10 18 cm -3 ) remains difficult due to the high activation energy of Mg dopants which can result in high resistivity and poor ohmic contacts. Mg-doped p-type amorphous GaN 1-x As x (0.17

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“…For the p-type electrode, Ni/Au was evaporated and annealed in a N 2 + O 2 mixture at 500 C for 10 min. [21][22][23][24] The circuit design for the fabrication of the LED driver was obtained by a standard CMOS process. All circuit design, simulation, and layout were performed using Cadence Virtuoso.…”

Section: Methodsmentioning

confidence: 99%

Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

Shin¹,

Iijima²,

Chiba³

et al. 2011

Jpn. J. Appl. Phys.

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In this paper, we proposed the possibility of implementing a single chip device for realizing optoelectronic integrated circuits (OEICs). Micro-light-emitting-diode (LED) arrays and a complementary metal–oxide–semiconductor (CMOS) pulse width modulation (PWM) silicon driver were proposed, designed, and fabricated on a single chip. The micro-LED arrays were separated by a dry etching method into 64 pixels of 8×8, each with a size of 30×30 µm2 and operated in 3 V at 100 µA. The PWM Si driver was well operated and modulated using various control signals. Furthermore, to investigate the driver for handling massive parallel information, a simple multifunctional driver was designed, fabricated, and flip-chip-bonded using a gold compliant bump and anisotropic conductive adhesive with micro-LED arrays.

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Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

Abstract: Recurrence formulae determining radial matrix elements of r 4 between quasirelativistic hydrogenic wavefunctions are derived. In the diagonal case they are a generalisation of the well known Kramer's relations. The formulae are also transformed to the basis of the Dirac wavefunctions.

Cited by 7 publications

References 14 publications

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes

Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

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Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

Abstract: Recurrence formulae determining radial matrix elements of r 4 between quasirelativistic hydrogenic wavefunctions are derived. In the diagonal case they are a generalisation of the well known Kramer's relations. The formulae are also transformed to the basis of the Dirac wavefunctions.

Cited by 7 publications

References 14 publications

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

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Characterization of p-GaN_1−xAs_x/n-GaN PN junction diodes