The structural properties and electrical conduction mechanisms of p-type amorphous GaN 1-x As x /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm -3 is achieved which allows a specific contact resistance of 1.3×10 -4 Ω-cm 2 . An increased gallium beam equivalent pressure during growth allows reduced resistivity but can result in the formation of a polycrystalline structure. Temperature dependent current voltage characteristics at low forward bias (<0.35 V)show that conduction is recombination dominated in the amorphous structure whereas a transition from tunneling to recombination is observed in the polycrystalline structure. At higher bias, the currents are space charge limited due to the low carrier density in the n-type region. In reverse bias, tunneling current dominates at low bias (<0.3 V) and becomes recombination dominated at higher reverse bias.GaN-based PN diodes are attractive for power electronic applications due to the high breakdown field and low power loss and are likely to play an important part in supporting the required large voltages in vertical power devices. However, achieving a high hole concentration (>10 18 cm -3 ) remains difficult due to the high activation energy of Mg dopants which can result in high resistivity and poor ohmic contacts. Mg-doped p-type amorphous GaN 1-x As x (0.17
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