Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

Abstract

In this paper, we proposed the possibility of implementing a single chip device for realizing optoelectronic integrated circuits (OEICs). Micro-light-emitting-diode (LED) arrays and a complementary metal–oxide–semiconductor (CMOS) pulse width modulation (PWM) silicon driver were proposed, designed, and fabricated on a single chip. The micro-LED arrays were separated by a dry etching method into 64 pixels of 8×8, each with a size of 30×30 µm2 and operated in 3 V at 100 µA. The PWM Si driver was well operated and modulated using various control signals. Furthermore, to investigate the driver for handling massive parallel information, a simple multifunctional driver was designed, fabricated, and flip-chip-bonded using a gold compliant bump and anisotropic conductive adhesive with micro-LED arrays.

Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

“…Our research group has been studying optoelectronic neurochips as heterogeneous OEICs over the past 10 years. [16][17][18][19][20][21][22][23][24][25][26] We are aiming to achieve biological system information processing by calculating the analog optical inputs of 2D matrix neurochips, and stacking of 2D matrix optical output arrays for analog optical results. In this study, we evaluated the optical interconnection between analog chips by prototype heterogeneous OEICs for the 2D vertical neurointegrated optical ICs.…”

Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor

“…When III-nitride compounds are combined with silicon electronics for their superior performance, they can be adopted in optoelectronics integrated for optical interconnection. 16,17) Si integrated electronics offers advanced signal processing, and nitride semiconductors have shown excellent optoelectronics and high electronic properties. Thus, the heterogeneous integration of these two material systems is promising not only for high-resolution image sensors that cover the UV to infrared range, but also flexibility for advanced applications.…”