Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon

Ajika, N.; Ohi, M.; Arima, Hideo; Matsukawa, T.; Tsubouchi, Nobuteru

doi:10.1109/vlsit.1991.705991

Cited by 12 publications

(2 citation statements)

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“…Using an ammonia treatment to nitridize the poly surface can inhibit the occurrence of the cusp-like structure along the grain boundary. After depositing the poly-Si on the FG oxide, an treatment [6] was employed before the SiN layer deposition. The FG area was then defined by photolithography and the SiN was removed by dry etching.…”

Section: Introductionmentioning

confidence: 99%

Using an Ammonia Treatment to Improve the Floating-Gate Spacing in Split-Gate Flash Memory

Chu

Lin

et al. 2004

IEEE Electron Device Lett.

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In the split-gate flash memory process, during poly oxidation, the bird's beak encroaches under the SiN film, especially along the poly grain boundary, and that will cause nonuniform floating-gate (FG) spacing, even bridging, which is an obstacle to cell shrinkage. In this paper, we show that employing an ammonia treatment on the poly can nitridize the poly surface, thereby avoiding bird's beak bridging. After the ammonia treatment, FG spacing is quite uniform and can be improved from 0.09 to 0.03 m. The XPS analysis on the ammonia treated poly shows the oxynitride thickness is less than 5 nm.

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Section: Introductionmentioning

confidence: 99%

Using an Ammonia Treatment to Improve the Floating-Gate Spacing in Split-Gate Flash Memory

Chu

Lin

et al. 2004

IEEE Electron Device Lett.

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“…7 To solve this problem, it was reported that the introduction of a thermal nitridation step to the oxide film prior to the formation of silicon nitride film by low pressure chemical vapor deposition ͑LPCVD͒ reduced the surface roughness of silicon-nitride film. [8][9][10] Nitridation also affects electrical characteristics of MONOS transistors. In particular, data erase and data retention times decrease.…”

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confidence: 99%