Effects of Nitridation on the Electrical Properties of MONOS Nonvolatile Memories

Aozasa, Hiroshi; Fujiwara, I.; Nomoto, Kazumasa; Komatsu, Hiroshi; Koyama, Kazuhide; Kobayashi, Toshio; Oda, Tatsuji

doi:10.1149/1.2752979

Cited by 3 publications

(1 citation statement)

References 28 publications

(32 reference statements)

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“…In this case, the characteristics of the CTL will be affected with the underlayer's topology because thickness of the CTL is only a few nm. The memory window, date retention as well as program/erase speed of SONOS devices are most affected by trap properties of CTL [7][8][9]. Therefore, when the underlaying poly-Si has large surface roughness as discussed above, the mismatch between materials can be intensified causing larger interface traps and a problem in the device reliability.…”

Section: Introductionmentioning

confidence: 99%

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Jeong

Sung

et al. 2021

Micromachines

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In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is enlarged with the number of interface traps and the data retention properties are deteriorated in the device with underlying poly-Si channel which can be serious problem in gate-last 3D NAND flash memory architecture. To improve the memory performance, high pressure deuterium (D2) annealing is suggested as a low-temperature process and the program window and threshold voltage shift in data retention mode is compared before and after the D2 annealing. The suggested curing is found to be effective in improving the device reliability.

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Section: Introductionmentioning

confidence: 99%

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Jeong

Sung

et al. 2021

Micromachines

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Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or $\hbox{N}_{2}\hbox{O}$-Grown Oxynitride as Tunnel Layer

Chen

Liu

et al. 2014

IEEE Trans. Device Mater. Relib.

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Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer

何美林¹,

徐静平²,

陈建雄³

et al. 2013

Acta Phys. Sin.

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Memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer were comparatively investigated. Experimental results show that the MONOS memory with LaON/SiO2 as dual-tunnel layer exhibits large memory window, high program/erase (P/E) speed, good endurance and retention properties. The basic mechanism lies in the large dielectric constant of LaON which increases the injection efficiency of carriers during programming/erasing, the smaller Oxygen diffusion coefficient in LaON which leads to the reduction of interface traps and thus the leakage of stored charges through trap-assisted tunneling during retention. Moreover, strong La-N, Hf-N and O-N bonds are formed at/near the interface due to Nitrogen incorporation, which effectively decreases the damages of the P/E cycle stress to the interface, and thus achieves excellent endurance. In addition, impacts of annealing temperatures on characteristics of MONOS memory were investigated. It is demonstrated that the memory annealed at 800 ℃ has better memory properties than that annealed at 700 ℃, which is attributed to the fact that the 800 ℃ NO annealing can incorporate more N into LaON (HfON), and well release strains, thus reducing defects in these dielectrics.

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Effects of Nitridation on the Electrical Properties of MONOS Nonvolatile Memories

Cited by 3 publications

References 28 publications

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or $\hbox{N}_{2}\hbox{O}$-Grown Oxynitride as Tunnel Layer

Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer

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