This paper describes a method for measuring the small current through the oxides on the order of lo-'" A or less using a floating gate MOSFET and the application results on flash memories with thin tunnel oxides. The method is based on accurate measurement of the threshold voltage of a floating gate MOSFET with no charge in the floating gate. We applied the method to flash memories to investigate the leak current behavior through thin tunnel oxides with very small areas (<0.16p.m2), and found some anomalous phenomena which cannot be obtained from SILC measurements using large capacitors. We also discuss possible mechanisms to explain the phenomena.
Two kinds of energy filtered atomic structure images of Si crystal in (011) orientation formed by no-loss and plasma-loss electrons were photographed using the energy analyzer of a sector type magnet which was attached to the bottom of a high resolution electron microscope.
The behavior of plasma-loss electrons in the crystal was discussed on the basis of the dynamical theory of electron diffraction. The contrast of the crystal lattice image formed by the plasma-loss electrons was calculated and compared with the observed image.
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