Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell

Ohnakado, T.; Mitsunaga, K.; Nunoshita, Masahiro; Onoda, Hiroshi; Sakakibara, K.; Tsuji, Naoki; Ajika, N.; Hatanaka, M.; Miyoshi, Hirokazu

doi:10.1109/iedm.1995.499196

Cited by 41 publications

(19 citation statements)

References 6 publications

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“…Based on the strained SiGe band-gap model in the MEDICI [7], an increase of the Ge content from 0% to 80% will cause the energy gap to drop from 1.12 to 0.67 eV. This improvement in the programming speed can be explained by (1), which indicates the generation rate of the electron hole pair (EHP) from the BTBT is exponentially inversely proportional to the energy gap, where A.BTBT and B.BTBT are 3.5 × 10 21 eV 1/2 /cm · s · V 2 and 2.25 × 10 7 V/cm · (eV) 3/2 , respectively.…”

Section: Introductionmentioning

confidence: 99%

“…I N ORDER to achieve a high programming efficiency, high scalability, and low-power operation, a new electroninjection scheme with a band-to-band tunneling (BTBT)-induced hot-electron (BBHE) mechanism has been employed in the p-channel flash devices [1]. In the BBHE, positive and negative biases are applied to control the gate and the drain, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Wang

Chang‐Liao

et al. 2006

IEEE Electron Device Lett.

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A novel p-channel flash device with a SiGe layer is proposed, which is based on the analysis made with the simulator MEDICI, to enhance the band-to-band-tunneling current and improve the programming speed. The programming biases of the p-channel flash device can be reduced with an equal programming speed. Simulation results show that more than one hundred times enhancement in the programming speed or 35% reduction of the drain voltage can be achieved in the proposed p-channel flash device with a 40% Ge content in the surface SiGe layer. In addition, a Si-cap layer is inserted between the SiGe and the tunneling oxide to obtain a high-quality interface and to optimize the cell structure.Index Terms-Band-to-band-tunneling-induced hot-electron (BBHE), high programming speed, low-voltage operation, p-channel flash, SiGe.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Wang

Chang‐Liao

et al. 2006

IEEE Electron Device Lett.

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“…W HEN compared with its n-channel counterpart, p-channel Flash memory offers advantages in fast programming speed, low power consumption, high scalability, and is hot-hole-injection free [1], [2], [6]- [8]. The split-gate structure is designed to be immune to the "over-erase" issue present in n-channel cells [4], and it has the same immunity to the "over-program" issue in p-channel cells.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of field-enhanced P-channel split-gate flash memory

Chu¹,

Lin²,

Wang

et al. 2005

IEEE Electron Device Lett.

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A p-channel split-gate Flash memory cell, employing a field-enhanced structure, is investigated in this letter. A cell with a sharp poly-tip structure is utilized to enhance the electric field, while using Fowler-Nordheim tunneling through the interpoly oxide. The cell demonstrated an erase voltage as low as 12 V. In cell programming, both channel-hot-hole impact ionization induced channel-hot-electrons (CHE) and band-to-band tunneling induced hot electrons (BBHE) are evaluated. BBHE shows an injection efficiency of 2 orders in magnitude higher than that of CHE. The cell also demonstrated an acceptable program disturb window, which is of high concern in a p-channel stacked-gate cell. Both programming approaches can pass 300 k program/erase cycles.

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“…In order to obtain high programming/erasing speeds, good retention and low-power consumption, some approaches were proposed to improve the characteristics of CT flash devices, such as stacked charge-trapping layer [1], stacked tunneling oxides [2], metal gate with high work function, and SiGe buried channel [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Improved operation characteristics for charge-trapping flash memory devices with SiGe buried channel and stacked charge-trapping layers

Chang‐Liao

Liu

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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Two approaches are proposed in this work to improve the operation characteristics of charge-trapping (CT) flash devices, namely, SiGe buried channel and stacked charge-trapping layer.SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operation characteristics of CT flash devices were studied. The programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. The retention properties of CT flash devices are satisfactory with suitable Ge content in SiGe buried channel and proper thickness of Si-cap layer. Moreover, the programming and erasing speeds of CT flash devices are significantly improved by applying Si 3 N 4 /Hf x Al 1-x O charge trapping layers due to the enhanced carrier capture efficiency with extra interface (Si 3 N 4 /Hf x Al 1-x O). The retention property is clearly improved as well.

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Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell

Cited by 41 publications

References 6 publications

Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Enhanced Band-to-Band-Tunneling-Induced Hot-Electron Injection in p-Channel Flash by Band-gap Offset Modification

Performance evaluation of field-enhanced P-channel split-gate flash memory

Improved operation characteristics for charge-trapping flash memory devices with SiGe buried channel and stacked charge-trapping layers

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