Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

“…2 is used as a demonstration for the extraction of energy distribution. Following the early works [7,8,18], ΔVth is converted to ΔNt, the equivalent trap density at the interface of interfacial layer (IL) and HK using eq. (1).…”

“…Application of metal gate/HK stack, however, has increased positive bias temperature instability (PBTI) [1][2][3][4][5][6][7][8]. PBTI originates from electron traps (ETs) and one of their sources is water/hydrogen related species [9,10].…”

“…In the early stage of HK development, it was reported that there are as-grown ETs above the Si conduction band edge, Ec, [1,5,8] and located in the HK layer [3,11]. Their charging-discharging is highly dynamic: the charging and discharging completes within seconds [1,3,12].…”

Investigation of anomalous capacitance-voltage behavior caused by interface dipoles and the effect of post-metal-annealing

“…For convenience in the following discussion, the positive shifts of down traces with respect to the up one was defined as the positive loop width, otherwise, it was defined as negative loop width. With regard to the hysteresis observed in the conventional CV curves, it was attributed to trapping and de-trapping of charges in the oxide [12]. However, the opposite shift directions of the CV curves in conventional and pulse technique cannot be consistently explained by the trapping/de-trapping of the charges.…”

“…In order to characterize these defects comprehensively, a number of techniques have been proposed to investigate the reliability, degradation, device lifetime, defect loss, electron trapping and de-trapping, interface states etc. [8][9][10][11][12]. One of the popular techniques, termed as pulse capacitance-voltage (CV) technique, is able to characterize the dielectric thin films in several hundred micro seconds.…”