Electroplated rf MEMS capacitive switches

Park, J.Y.; Kim, G.H.; Chung, Ki-Woong; Bu, Jong Uk

doi:10.1109/memsys.2000.838593

Cited by 42 publications

(13 citation statements)

References 6 publications

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“…The lowest actuation voltage measured on the fabricated switch is 9V [9]. The RF-MEMS capacitive switch is designed with thin ground plane and the transmission line, the actuation voltage obtained is 8V [10]. A sub-l0 volts RF MEM switch built on a semi-insulating GaAs substrate is demonstrated in [11].…”

Section: Related Workmentioning

confidence: 99%

Simulation of micro-cantilever based series switch and development of its ANN model

Naduvinamani¹,

Sheeparamatti²,

Kalalbandi³

et al. 2011

IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society

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This paper discusses few geometrical design issues to reduce the actuation voltage of series MEMS switch. It presents the design of RF-MEMS series cantilever based switch with pulldown electrodes using parallel capacitance between beam and pull down electrode. The switch structure is composed of aluminum material. Minimum actuation voltage achieved is 8 Volts. The simulation of the switch is carried out in CoventorWare a MEMS modeling and simulation software. An ANN model using the toolbox of MATLAB is developed using the results of simulation of designed switch in CoventorWare and it is also validated. This model can be used to take any required results quickly within the permissible range for the designed switch.

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Section: Related Workmentioning

confidence: 99%

Simulation of micro-cantilever based series switch and development of its ANN model

Naduvinamani¹,

Sheeparamatti²,

Kalalbandi³

et al. 2011

IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society

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“…Semiconductor switches such as FETs or PIN diodes are commonly used in monolithic microwave integrated circuits (MMICs). However, these semiconductor switches have high insertion loss and/or poor isolation in the "on" and "off" states leading to large resistive losses, high power consumption and low power handling capability at high operating frequencies [4]. MEMS switches have superior radio-frequency (RF) responses at high operating frequencies and accomplish switching by use of mechanical movement which requires energies on the order of 10 to 100 nJ per switching cycle [5].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Two Switch Superconducting Microstrip Hairpin Filters Using Series MEMS Switches

Vargas

Noel

Brzhezinskaya

et al. 2007

IEEE Trans. Appl. Supercond.

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A superconductor circuit based on series MicroElectro-Mechanical (MEM) switches is utilized to switch between two bandpass hairpin filters with 200 MHz bandwidth and nominal center frequencies of 2.1 GHz and 2.6 GHz. This is accomplished using 4 switches actuated in pairs, one pair at a time. When one pair is actuated the first bandpass filter is coupled to the input and output ports. When the other pair is actuated the second bandpass filter is coupled to the input and output ports, thus corresponding output responses are obtained.The device is made of YBa 2 Cu 3 O 7 thin film deposited on a 20 mm 20 mm LaAlO 3 substrate by pulsed laser deposition. BaTiO 3 deposited by RF magnetron sputtering is utilized as the insulation layer at the switching points of contact. Fabrication details are discussed along with simulation data and test results.

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“…On the other hand, switches connecting power amplifier and transmit antenna will see power levels up to 36 dBm (4 W) and the capability of the switch to handle the heating is a serious concern. MEMS switches are usually categorized by the contact methods: capacitive (metal-insulator-metal) [4]- [6] and resistive (metal-to-metal) [7]- [9]. Capacitive switches have a thin layer of dielectric material separating electrodes when actuated.…”

Section: Introductionmentioning

confidence: 99%

Thermal solutions for discrete and wafer-level rf mems switch packages

Mercado

Lee

Kuo

et al. 2003

IEEE Trans. Adv. Packag.

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In discrete radio frequency (RF) microelectromechanical systems (MEMS) packages, MEMS devices were fabricated on silicon or galium arsenide (GaAs) chips. The chips were then attached to substrates with die attach materials. In wafer-level MEMS packages, the switches were manufactured directly on substrates. For both types of packages, when the switches close, a contact resistance of approximately 1 exists at the contact area. As a result, during switch operations, a considerable amount of heat is generated in the minuscule contact area. The power density at the contact area could be up to 1000 times higher than that of typical power amplifiers. The high power density may overheat the contact area, therefore affect switch performance and jeopardize long-term switch reliabilities.In this paper, thermal analysis has been performed to study the heat dissipation at the switch contact area. The goal is to control the "hot spots" and lower the maximum junction temperature at the contact area. A variety of chip materials, including Silicon, GaAs have been evaluated for the discrete packages. For each chip material, the effect of die attach materials has been considered. For the wafer-level packages, various substrate materials, such as ceramic, glass, and low-temperature cofire ceramic (LTCC) have been studied. Thermal experiments have been conducted to measure the temperature at the contact area and its vicinity as a function of dc and RF powers. Several solutions in material selection and package configurations have been explored to enable the use of MEMS with chips or substrates with relatively poor thermal conductivity. For discrete MEMS packages, placing the die inside a copper cavity on the substrate provides significant heat dissipation. For wafer-level packages, thin diamond coatings on the substrate could reduce the hot-spot temperature considerably.

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Electroplated rf MEMS capacitive switches

Cited by 42 publications

References 6 publications

Simulation of micro-cantilever based series switch and development of its ANN model

Simulation of micro-cantilever based series switch and development of its ANN model

Design and Fabrication of Two Switch Superconducting Microstrip Hairpin Filters Using Series MEMS Switches

Thermal solutions for discrete and wafer-level rf mems switch packages

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