Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

“…The binary-barrier AlN/GaN HEMT has set remarkable performance benchmarks due to the exceptionally high polarization-induced 2DEG density achievable (up to 6×10 13 cm −2 ) with high mobility (1800 cm 2 /Vs) [3], [13], [14], [15]. Yet only a handful of HEMT designs have leveraged a few of the attributes that are inherent to this particular heterostructure [14], [16], [17], [18]. In this letter we propose and demonstrate a novel alternative to post-growth surface passivation based on a dual-channel AlN/GaN/AlN/GaN heterostructure.…”

“…This is likely due to the recessed-gate HEMT having a larger C GS and C GD resulting in a higher gate charging time. The three charging times involved in setting f t are the parasitic charging time (C GD (R S + R D ), channel charging time ((C GD + C GS ) × g DS /g m ), and the drain delay (C GD /g m ) [14], [15]. In the case of the recessed-gate HEMT, C GD and C GS increase due to the presence of the upper 2DEG while the lower 2DEG is the only modulated currentcarrying channel, and therefore may slightly suffer in terms of frequency performance due to the increased (parasitic) gate capacitance.…”

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

“…36 Yet only a handful of HEMT designs have leveraged a few of the attributes that are inherent to this particular heterostructure. 30,31,[37][38][39][40] In this report we propose and experimentally demonstrate an epitaxial-grown alternative to post-growth surface passivation based on a dual-channel AlN/GaN/AlN/GaN heterostructure through a multi-faceted assessment of its operational performance. The upper AlN/GaN heterojunction undergoes a recess etch, conformal oxidation, and gate metal deposition as illustrated in Fig.…”

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

“…ГЭС со сверхтонким AlN-барьером при-знаны наиболее подходящими для изготовления тран-зисторов крайне высокого частотного диапазона из-за уменьшения эффектов короткого канала и низкого по-рогового напряжения [4][5][6]. Уже продемонстрированы AlN/GaN-транзисторы с предельной частотой усиления по току и мощности 342 и 518 ГГц, соответствен-но [5,7,8]. Активно развиваются транзисторы на основе in situ пассивированных AlN/GaN-ГЭС, в которых по-лучены малые токи утечки без дополнительного подза-творного диэлектрика [9] и достигнута рекордная ком-бинация высокого пробивного напряжения и удельной проводимости [10].…”