Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Deen, David A.; Miller, Ross A.; Osinsky, A.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Katzer, D. Scott; Nepal, Neeraj

doi:10.1063/1.4972225

Cited by 8 publications

(2 citation statements)

References 59 publications

(90 reference statements)

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“…Other simulation reports also assume similar values for trap concentrations and energy levels. 13,[17][18][19] For a brief review on reported trap energy levels, refer to Ref. 13.…”

Section: Simulation Methodology and Simulationmentioning

confidence: 99%

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Binder

Khan

Yang

et al. 2019

ECS J. Solid State Sci. Technol.

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This paper presents a fabless design approach focusing on the impact of heterostructure design on the performance of low voltage GaN power HEMTs. Compared to the standard high voltage design process, low voltage design (<100 V) comes with a unique set of challenges especially concerning breakdown rules. Low voltage simulations reveal less dependence on vertical leakage current and substrate breakdown compared to high voltage designs, and more reliance on buffer leakage and punch-through as the dominant factors leading to breakdown. To analyze the impact of heterostructure design on the device performance, optimization curves are presented for breakdown voltage, on-state resistance, and gate charge. Simulations are performed in Sentaurus TCAD and correlated to known existing experimental results where possible. Trends are presented for the optimization of the channel layer thickness, barrier layer thickness and molar fraction, and impact of an AlN interlayer.

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“…Other simulation reports also assume similar values for trap concentrations and energy levels. 13,[17][18][19] For a brief review on reported trap energy levels, refer to Ref. 13.…”

Section: Simulation Methodology and Simulationmentioning

confidence: 99%

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Binder

Khan

Yang

et al. 2019

ECS J. Solid State Sci. Technol.

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“…The idea of stacking several 2DEGs has been investigated conspicuously over the past two decades. Considerable work has been done on AlGaN/GaN-double-channels [4][5][6][7][8][9][10][11][12][13], AlN/GaN-double-channels [14,15], InAlN/GaNdouble-channels [16,17] and Al(Ga)N/GaN-multi-channels [1][2][3][18][19][20]. One of the main concerns regarding multichannel heterostructures based on AlGaN barriers is the lattice-mismatch-induced tensile strain, which limits the number of channels that can be grown before cracking.…”

mentioning

confidence: 99%

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Sohi¹,

Carlin²,

Rossell³

et al. 2021

Semicond. Sci. Technol.

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In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickness was minimized while maintaining a high electron mobility in each channel. We demonstrate a 10-channel heterostructure with a period thickness of 14 nm and a total sheet resistance of 82 Ω □−1. By increasing the doping concentration in each channel, much higher carrier densities per channel were achieved, resulting in an ultra-low sheet resistance of 36 Ω □−1. Furthermore, optimizing the heterostructure design enabled high electron mobilities, up to 1530 cm2 V−1 s−1, independent of the number of channels, by secluding the 2DEG from the barrier interfaces in each channel to avoid both strong interface roughness and ionized impurity scattering. This was achieved by modulation-doping of the GaN channel and the insertion of a GaN interlayer between the InAlN barrier and the AlN spacer. This approach offers a new platform for designing high conductivity heterostructures, where the general trade-off between electron mobility and carrier density can be significantly alleviated.

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Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

et al. 2018

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Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Cited by 8 publications

References 59 publications

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

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