Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures

Dopant dependence on passivation and reactivation of carrier after hydrogenation

“…2͑c͒ clearly shows the decrease in the width by HAT, indicating the H passivation of P by forming the P-Si-H passivation centers. Considering the previous results, 23,24 it is found that 50%-60% of active P dopant was passivated by HAT at 120°C. This result is in good agreement with that in Fig.…”

“…The ESR signal with a g value of 1.998 is due to conduction electrons in n-type P-doped Si. 8,23,24 The width significantly depends on P concentration. 23,24 If the width would be decreased for the heavily P-doped Si, it means the passivation of P. The result in Fig.…”

“…8,23,24 The width significantly depends on P concentration. 23,24 If the width would be decreased for the heavily P-doped Si, it means the passivation of P. The result in Fig. 2͑c͒ clearly shows the decrease in the width by HAT, indicating the H passivation of P by forming the P-Si-H passivation centers.…”

Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

“…Electron spin resonance ͑ESR͒ is a sensitive method for investigating P donors or conduction electrons in Si. 9,10 It is also sensitive to defects with dangling bonds. This method makes it possible to obtain information on both P donors and defects in SiNWs.…”

“…It can be explained by an increase in scattering among conduction electrons and with the P atoms, resulting in a decrease in the spin-lattice relaxation time T 1 , leading to a broadening of the signal width with increasing P concentration. 9,10 Assuming that the data in P-doped SiNWs correspond to those in bulk Si, the concentration of P in SiNWs is estimated to probably reach about 10 20 cm −3 .…”