Dopant dependence on passivation and reactivation of carrier after hydrogenation

Fukata, Naoki; Sato, Shôichi; Morihiro, H.; Murakami, Kouichi; Ishioka, Kunie; Kitajima, Masahiro; Hishita, Shunichi

doi:10.1063/1.2654831

Cited by 13 publications

(9 citation statements)

References 24 publications

(49 reference statements)

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“…However, after hydrogen passivation of P, such impurity energy levels and electronic states disappear. In other words, H can indeed passivate P atoms in the form of P-Si-H complex in Si-NCs, resulting in reduced free carrier concentration, i.e., the P-Si-H complex in Si-NCs behaves similarly to that in crystalline Si and Si nanowires [31][32][33][34]. It is worthwhile to note that the impurity energy level introduced by P at site 3 is much deeper than that at site 1, demonstrating that P atoms incorporated near the surface of the nanocrystal are more difficult to be electrically activated than those incorporated in the core of the nanocrystal.…”

Section: Resultsmentioning

confidence: 99%

Size dependence of phosphorus doping in silicon nanocrystals

Zheng-ping

Wen

et al. 2016

Nanotechnology

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Doping of silicon nanocrystals (Si-NCs) is one of the major challenges for silicon nanoscale devices. In this work, phosphorus (P) doping in Si-NCs which are embedded within an amorphous silicon matrix is realized together with the growth of Si-NCs by plasma-enhanced chemical vapor deposition under a tunable substrate direct current (DC) bias. The variation of phosphorus concentration with substrate bias can be explained by the competition of bonding processes of Si-Si and P-Si bonds. The formation of Si-Si and P-Si bonds is differently influenced by the ion bombardment controlled by the substrate bias, due to their bonding energy difference. We have studied the influences of grain size on P doping in Si-NCs. Free carrier concentration, which is provided by activated P atoms, decreases with decreasing grain size due to increasing formation energy and activation energy of P atoms incorporated in Si-NCs. Furthermore, we have studied the P locations inside Si-NCs and hydrogen passivation of P in the form of P-Si-H complexes using the first-principles method. Hydrogen passivation of P can also contribute to the reduced free carrier concentration in smaller Si-NCs. These results provide valuable understanding of P doping in Si-NCs.

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Section: Resultsmentioning

confidence: 99%

Size dependence of phosphorus doping in silicon nanocrystals

Zheng-ping

Wen

et al. 2016

Nanotechnology

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“…Previous studies have revealed the binding states and diffu-sion behavior of H in Si. [20][21][22][23][24][25][26] In particular, the lowtemperature heat treatment behavior and binding state of H from 100 to 800 °C have been investigated. [34][35][36] Fukata and Suezawa demonstrated that V and void defects form complexes and binding states with H in C-doped Si after HAT.…”

Section: Hydrogen Diffusion Mechanism In Carbon-cluster Ion-implantat...mentioning

confidence: 99%

“…20) In addition, Fukata and co-workers reported that H is trapped in a Si-H bond in {111} platelets in Si during P implantation and H-atom treatment (HAT). [21][22][23][24] They also found that V forms complexes via the dissociation behavior upon heat treatment in C-doped Si after HAT. [34][35][36] In previous papers, for a high dose of H introduced into Si, the analytical results of the binding state and diffusion behavior after heat treatment below 800 °C have been reported.…”

Section: Introductionmentioning

confidence: 97%

“…For example, H terminates a dangling bond of Si, reduces the Si=SiO 2 interface state density, electrically inactivates the semiconductor donor and acceptor, {111} platelets, and metastable diatomic H complexes, stabilizes the H molecule in crystalline Si, and passivates the deep-level defect of transition metals. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] In other studies, the H high-dose implantation condition enhances the formation of H-induced platelet defects used in the smart-cut process through the use of bubbles filled with H molecules. [28][29][30][31] In particular, hydrogen atoms easily form complexes such as impurities and defects in Si, because the diffusion velocity of H in Si bulk is extremely high.…”

Section: Introductionmentioning

confidence: 99%

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Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

Okuyama

Masada

Kadono

et al. 2017

Jpn. J. Appl. Phys.

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We investigated the diffusion behavior of hydrogen in a silicon wafer made by a carbon-cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a carbon cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the carbon-cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of carbon, oxygen, and vacancies.

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“…On the other hand, hydrogen is known to have various effects on semiconductors. [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] In previous studies, the formation of hydrogen-induced platelet defects was reported for the smart-cut process. [32][33][34][35] In another study, Fukata and co-workers indicated that hydrogen is trapped in a siliconhydrogen bond in {111} platelets in silicon.…”

Section: Introductionmentioning

confidence: 99%

Diffusion kinetic of hydrogen in CH₃O-molecular-ion-implanted silicon wafer for CMOS image sensors

Okuyama

Onaka‐Masada

Shigematsu

et al. 2018

Jpn. J. Appl. Phys.

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The association and dissociation behavior of hydrogen in the implanted region of a CH 3 O cluster were investigated for high-performance CMOS image sensors. Two hydrogen peaks were observed in the CH 3 O-implanted region after epitaxial growth and heat treatment. The difference in the depths of the two peaks accords with the difference in the depth of carbon-cluster-related and new extended stacking fault defects. Thus, we calculated the activation energies of the association and dissociation of hydrogen, assuming a dissociation reaction for the first peak, formed at a small depth from the surface of the silicon substrate, and a simple reversible reaction for the second peak, formed at a large depth from the surface of the silicon substrate. The dissociation activation energy corresponding to the first peak was 0.75 + 0.03 eV. This activation energy indicates that the hydrogen associated with the first peak forms a binding state with a carbon and silicon self-interstitial cluster (C/I cluster). On the other hand, the binding energy corresponding to the second peak was calculated to be 0.78 eV, which was close to the C-H 2 binding energy. Consequently, the CH 3 O-implanted region forms a binding state with hydrogen and a C/I cluster or a C-H 2 binding state.

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Dopant dependence on passivation and reactivation of carrier after hydrogenation

Cited by 13 publications

References 24 publications

Size dependence of phosphorus doping in silicon nanocrystals

Size dependence of phosphorus doping in silicon nanocrystals

Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

Diffusion kinetic of hydrogen in CH₃O-molecular-ion-implanted silicon wafer for CMOS image sensors

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Dopant dependence on passivation and reactivation of carrier after hydrogenation

Cited by 13 publications

References 24 publications

Size dependence of phosphorus doping in silicon nanocrystals

Size dependence of phosphorus doping in silicon nanocrystals

Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

Diffusion kinetic of hydrogen in CH3O-molecular-ion-implanted silicon wafer for CMOS image sensors

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Diffusion kinetic of hydrogen in CH₃O-molecular-ion-implanted silicon wafer for CMOS image sensors