Electrochemical CV‐profiling of GaN

Wolff, Thomas; Rapp, Manfred; Rotter, Thomas

doi:10.1002/pssc.200405079

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…A clear rectifying behavior was measured in our SBDs and the current voltage (I-V) behavior was studied in detail in the dark. Capacitance-voltage (C-V) measurements and electrochemical CV profiling (ECV) [6] were used to determine the net donor concentration in our cubic GaN and Al 0.3 Ga 0.7 N layers which varied between 9 · 10 16 and 2 · 10 19 cm À3 . The doping density dependence of breakdown voltages derived from the reverse breakdown voltage characteristics of c-GaN SBDs is investigated.…”

Section: Methodsmentioning

confidence: 99%

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

As¹,

Potthast²,

Fernandez³

et al. 2006

Microelectronic Engineering

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Section: Methodsmentioning

confidence: 99%

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

As¹,

Potthast²,

Fernandez³

et al. 2006

Microelectronic Engineering

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Ni Schottky diodes on cubic GaN

Potthast

Fernandez

et al. 2006

Applied Physics Letters

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Schottky diodes were fabricated by thermal evaporation of nickel on phase-pure cubic GaN(c-GaN) layers grown by plasma assisted molecular beam epitaxy on freestanding 3C-SiC. Detailed analysis of the I-V characteristics revealed the existence of a thin surface barrier at the Ni-semiconductor interface. Thermal annealing in air at 200°C alters the composition of this thin surface barrier, reduces the leakage current by three orders of magnitude, and increases the breakdown voltage. The dependence of the breakdown voltage on the doping density of the c-GaN layers is in good agreement with calculated values. We obtain a critical electric-field strength of Ecrit≅2.5×106V∕cm for c-GaN.

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Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and Al_xGa_1-xN Epilayers

Potthast

Fernandez

et al. 2005

MRS Proc.

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Ni Schottky-diodes (SDs) 300 μm in diameter were fabricated by thermal evaporation using contact lithography on cubic GaN and AlxGa1-xN epilayers. Phase-pure cubic GaN and c-Al0.3Ga0.7N/GaN structures were grown by plasma assisted molecular beam epitaxy (MBE) on 200 µm thick free-standing 3C-SiC (100) substrates. The quality of the cubic group III-nitride epilayers was checked by high resolution X-ray diffractometry, atomic force microscopy and photoluminescence at room temperature and at 2 K. Large deviations from the thermionic emission transport were observed in the current voltage (I-V) behavior of these SDs. Detailed analysis of the I-V characteristics at 300 K and at low temperature showed that a thin surface barrier is formed at the Ni semiconductor interface. Thermal annealing in air at 200°C alters the composition of this thin surface barrier and reduces the leakage current by three orders of magnitude. The doping density dependence of breakdown voltages derived from the reverse breakdown voltage characteristics of c-GaN SDs is in good agreement with theoretically calculated values and follows the expected trend. From these experimental data a blocking voltage of higher than 600V is extrapolated for c-GaN films with a doping level of ND = 5×1015 cm-3.

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Electrochemical CV‐profiling of GaN

Cited by 3 publications

References 7 publications

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Ni Schottky diodes on cubic GaN

Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and Al_xGa_1-xN Epilayers

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Electrochemical CV‐profiling of GaN

Cited by 3 publications

References 7 publications

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Ni Schottky diodes on cubic GaN

Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers

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Product

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Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and Al_xGa_1-xN Epilayers