Ni Schottky diodes on cubic GaN

As, D. J.; Potthast, S.; Fernandez, J.R.L.; Schörmann, Jörg; Lischka, K.; Nagasawa, Hiroyuki; Abe, Masayuki

doi:10.1063/1.2193401

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…This is in good agreement with earlier findings where it was found that annealing of metal contacts on c-III-nitrides reduces the leakage current significantly [14], [15]. Then c-AlGaN/GaN mesas were formed by SiCl 4 RIE in order to separate single devices.…”

Section: Methodssupporting

confidence: 92%

Cubic AlGaN∕GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off Characteristics

Tschumak¹,

Ferro²,

Siffert³

2010

AIP Conference Proceedings

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The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off hetero-junction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realized by Ar + implantation before c-AlGaN/GaN growth. HFETs with normally-off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitancevoltage characteristics of the gate contact were performed to detect the electron channel at the c-AlGaN/GaN heterointerface.

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Section: Methodssupporting

confidence: 92%

Cubic AlGaN∕GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off Characteristics

Tschumak¹,

Ferro²,

Siffert³

2010

AIP Conference Proceedings

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“…[23][24][25][26][27] As thermal stability of metal contacts is important for device operations at high temperatures and in harsh environments, several authors studied the effect of high temperature furnace annealing on Schottky barrier parameters in GaN based devices. [28][29][30][31] In most of these reports, furnace annealing is done for a relatively longer period (5-60 min) where Schottky barriers are found to degrade with increase in annealing temperature. For example, a reduction in SBH in Ni/GaN is observed upon annealing due to reaction of Ni with GaN forming various phases like Ga 4 Ni 3 , Ga 4 Ni 2 , etc.…”

mentioning

confidence: 99%

Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

Kumar

Latzel

Christiansen

et al. 2015

Applied Physics Letters

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Current-voltage (as a function of temperature), capacitance-voltage, and 1/f noise characteristics of Ni/GaN Schottky barrier diodes (SBDs) as function of rapid thermal annealing (RTA) are studied. It is found that RTA treatments of SBDs at 450 degrees C for 60 s resulted in a significant improvement of ideality factor and Schottky barrier height: the ideality factor decreased from 1.79 to 1.12 and the barrier height increased from 0.94 to 1.13 eV. The spectral power density of current fluctuations in the diode subjected to RTA at 450 degrees C is found to be two orders of magnitude lower as compared to the as-deposited diode. Improved diode characteristics and decreased 1/f noise in RTA treated (450 degrees C/60 s) diode are attributed to reduced level of barrier inhomogeneities at the metal-semiconductor interface and explained within the framework of the spatial inhomogeneity model. (C) 2015 AIP Publishing LLC

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“…Capacitance-voltage (C-V) measurements on cubic AlGaN/GaN metal-oxide-semiconductor (MOS) structures [12,13] and on Schottky diodes [14][15][16] showed in unintentially doped epilayers a background carrier concentration N D -N A of about 9x10 16 -2x10 17 cm -3 for the cubic GaN Table 1 and are used in our self-consistent band structure calculations. In Fig.…”

Section: Methodsmentioning

confidence: 99%

Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C‐SiC substrates

Zado

2013

Phys. Status Solidi C

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In this work we present a novel method of the electrical separation of the substrate and the hetero junction field effect transistor device. For the epitaxial growth of our structures free standing 3C‐SiC (001) substrates with a free carrier concentration of n=2.7×1018 cm‐3 and a resistivity of ρ=34 mΩcm were used. On a 50 nm c‐GaN buffer layer an asymmetric multi quantum well structure consisting of 5 periodes of two cubic GaN:C asymmetric QWs (1 nm and 2 nm) embed‐ded between 3 nm thick c‐AlN:C barriers. A 50 nm c‐GaN cap layer completes the sample structure. A detailed conduction band profile and the quantized electron states within the asymmetric quantum well were calculated using a 1D Poisson‐Schrödinger‐solver. The structural properties were analyzed by atomic force microscopy and high resolution x‐ray diffraction. Current‐voltage measurements of these structures showed an increase of the serial resistivity by six orders of magnitude (from 5 mΩ to 8 kΩ) compared to an unstructured c‐GaN reference sample. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Ni Schottky diodes on cubic GaN

Cited by 12 publications

References 15 publications

Cubic AlGaN∕GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off Characteristics

Cubic AlGaN∕GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off Characteristics

Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C‐SiC substrates

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