Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium

Hwang, Joon; Lin, Dennis; Lin, Yeh-Kai; Chang, Wen-Thong; Yang, Gwo-Huei

doi:10.1016/j.tsf.2010.08.114

Cited by 3 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[11][12][13] But at the same time, a large amount of fixed charge was introduced at the interface, which caused flat band voltage (V FB ) shifting that has not been systematically investigated yet. 6,[14][15][16] Fixed charges of high density would cause lower mobility by strong coulombic scattering and shift of the threshold voltage. 17,18 High temperature (450 C) oxygen annealing was tried to improve the performance of metal-oxide-semiconductor (MOS) capacitor.…”

Section: CMmentioning

confidence: 99%

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Deng¹,

Xie²,

Deduytsche³

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si Appl. Phys. Lett. 99, 163505 (2011) Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator J. Appl. Phys. 110, 083708 (2011) Synthesis and electrical and magnetic properties of Mn-doped SnO2 nanowires J. Appl. Phys. 110, 083907 (2011) Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process Appl. Phys. Lett. 99, 161908 (2011) Accurate characterization of organic thin film transistors in the presence of gate leakage current AIP Advances 1, 042123 (2011) Additional information on Appl. Phys. Lett.

show abstract