Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Oh, Sang-A; Yu, Kyeong Min; Jeong, So-Hyun; Bae, Byung Seong; Yun, Eui‐Jung

doi:10.3938/jkps.66.1144

Cited by 1 publication

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“…22) In our previous paper, we reported that S incorporation played a positive role in the electrical properties and stabilities of sulfur-incorporated zinc-tin-oxide TFTs. 23) Hence, there seems to be a discrepancy with the effects of S inclusion on the properties of oxide semiconductor thin films. Therefore, in this study, the effects of the incorporation of F and S on the properties of a-IGZO thin films were examined by SF 6 plasma treatment.…”

Section: Introductionmentioning

confidence: 99%

Effects of SF₆ plasma treatment on the properties of InGaZnO thin films

Choi

Bae

Yun

2018

Jpn. J. Appl. Phys.

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The effects of sulfur hexafluoride (SF6) plasma on the properties of amorphous InGaZnO (a-IGZO) thin films were examined. The properties of the a-IGZO thin films were characterized by Hall effect measurement, dynamic secondary ion mass spectroscopy (SIMS), and X-ray photoelectron spectroscopy (XPS). The IGZO thin films treated with SF6 plasma before annealing had a very high resistance mainly owing to the inclusion of S into the film surface, as evidenced by SIMS profiles. On the other hand, the samples treated with SF6 plasma after annealing showed better electrical properties with a Hall mobility of 10 cm2/(V·s) than the untreated samples or the samples SF6 plasma-treated before annealing. This was attributed to the increase in the number of oxygen vacancy defects in the a-IGZO thin films owing to the enhanced out-diffusion of O to the ambient and the increase in the number of F-related donor defects originating from the incorporation of a much larger amount of F than of S into the film surface, which were confirmed by XPS and SIMS.

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Section: Introductionmentioning

confidence: 99%