Flash-lamp annealing (FLA) of a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The flash lamp anneal pulse width is so small that thermal stress becomes small. We used flash-lamp annealing to improve the quality of oxide material for the thin film transistor (TFT) application. We investigated the flash lamp annealing effect to improve the stability of Oxide TFT. We have investigated Xenon (Xe) FLA effect on the stability of each IGZO single layer and Oxide TFT as varying the power of the lamp. And also, we investigated the effect of the shot numbers of the flash lamp. We measured the light illumination effect on the transfer curves. FLA improved the stability of the IGZO TFT without substrate damage. Crystallization by FLA occurred under 8kW 5shots at Room temperature (RT). The light illumination stability was better for higher energy of FLA under the non-crystallized condition, which was 8kW 5shots at RT.
This study demonstrates a continuous high-resolution roll-to-roll (R2R) microcontact printing (µCP) process capable of printing inks on substrates with a wide range of surface energies. This process is based on rapid solidification of the fluoropolymer ink made up of a low boiling point solvent. The use of a hydrophobic siloxane polymer for the stamp allows film formation onto various substrates due to weak adhesion with the fluorinated polymer ink. To investigate its practical applicability the patterned layer printed by the R2R µCP was used as an etching resistant layer to pattern metallic and dielectric materials with 10 µm resolution. Moreover, the organic and oxide thin-film transistors with the patterned channels were combined to produce the hybrid complementary inverter circuits, having full swing transfer characteristics.
We investigated the photo responses of an amorphous indium gallium zinc oxide (a-IGZO) thin film under light illumination with various wavelengths and intensities. By using the measured photo-conductivities of a-IGZO thin films, we extracted the photo excitation activation energy and dark relaxation activation energy through extended stretched exponential analysis. The stretched exponential analysis was found to describe well both the photoexcitation and the dark-relaxation characteristics. These analyses indicated that recombination takes place more slowly and through activation processes that are more deeply bound with the broader distribution of activation energies (Eac) than those corresponding to the photo-generation process. The longer wavelength of the incident light, the slower the dark-relaxation occurs because of the formation of higher Eac for the ionized oxygen vacancy (Vo2+) states. For the dark-relaxation process, we also observed that the stretching exponent increases and the distribution of energy levels became narrower for longer wavelengths. This suggests that the neutralization of Vo2+ to Vo is slower for longer wavelengths due to the higher energy barrier height (Eac) for the neutralization of Vo2+.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.