Electrical isolation of n-type and p-type InP layers by proton bombardment

Abstract

The evolution of the sheet resistance (R s ) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (D th ) to convert the conductive layer to a highly resistive one is different for n-and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where In P is responsible for electron trapping and P In for the hole trapping. A time dependence of the R s was observed after each irradiation step to doses of ХD th and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200°C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450-500°C.

Electrically pumped hybrid evanescent Si/InGaAsP lasers

“…Metal contacts were deposited for the p side ͑Cr/ AuZn/ Au͒ on top of the remaining p-InGaAs layer, and for the n-side ͑Cr/ AuGe/ Au͒ on the exposed n-InP layer to the two sides of the mesa. The current flow was laterally confined to a 5-m-wide channel by means of proton implantation on its two sides [14]. The implantation dosage and proton energy were 5 ϫ 10 14 cm −2 and 170 keV, respectively.…”

Planar InAs photodiodes fabricated using He ion implantation

“…However it has previously be shown that the change in resistance can be highly sensitive to the implant species, implant conditions and the polarity of the target material. For example upon ion implantation in InP, sheet resistance values ranging from 10 5 /Square [20] (when using proton implantation at room temperature) to 10 8 /Square (when using Iron implantation at 77 K and utilizing subsequent annealing) [19,20] have been reported under differing conditions. Therefore investigation of the dependence of resistance in InAs on differing implant conditions is a subject of ongoing work.…”

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

“…Proton (H + ) implantation was applied to part of the tapers (see Fig. 1(a)) to decrease the doping [19] so that the tapers can be electrically isolated from the modulation segment. We characterize the device loss by using a set of cascaded EAMs as shown in the inset of Fig.…”