50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

Abstract

Abstract:We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits. ©2011 Optical Society of America

A roadmap for graphene

“…Si optical modulators, such as MachZehnder interferometers 61 , ring resonators 62 and electro-absorption modulators 63 are based on interference, resonance and bandgap absorption, respectively. Their operating spectra are usually narrow, however, and their slow switching times limit operation bandwidths.…”

Hybrid Silicon Photonic Integrated Circuit Technology

“…In the following, we describe three realizations in more detail. In [64], an EAM with a traveling-wave (TW) electrode design operating at 1.55-μm wavelength was reported. The TW electrode design overcomes the RC-limit due to a distributed circuit configuration, as shown in the schematic in Fig.…”

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

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