Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)

Witte, Hartmut; Rohrbeck, A.; Günther, Kay-Michael; Saengkaew, Phannee; Bläsing, J.; Dadgar, A.; Krost, A.

doi:10.1002/pssa.201001146

Cited by 9 publications

(4 citation statements)

References 10 publications

(14 reference statements)

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“…AlN is considered to be a promising semiconductor material because of its wide direct band gap, high piezoelectric response and small mismatches of lattice constant, and thermal expansion coefficient with Si substrate. It is these advantages of AlN material that has made it an attractive candidate material for numerous applications in various optoelectronic and microelectronic devices on Si substrate [ 1 – 3 ]. Bulk AlN has a high dielectric constant of 9, and the interface between AlN and Si is established to be thermally stable.…”

Section: Introductionmentioning

confidence: 99%

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Sun

Chen

et al. 2017

Nanoscale Res Lett

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The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si–N bonding at the interface gradually transforms to Si–O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si–O–Al bonding state can be detected in the 900 °C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.

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Section: Introductionmentioning

confidence: 99%

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Sun

Chen

et al. 2017

Nanoscale Res Lett

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“…GaN has been expected to be used for not only optical devices but also high-power and high-frequency devices. [1][2][3] However, the high cost of GaN substrates prevent the wide spread use of such devices; thus, a reduction in the cost of GaN substrates is very important. Recently, Si substrates have been considered as low-cost and large-diameter substrates.…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

Katagiri

Fang

Miyake

et al. 2014

Jpn. J. Appl. Phys.

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We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial growth of the GaN samples, and they became larger and then coalesced with each other with increasing growth time. The crystalline quality of the GaN samples was affected by the thickness of the 3C-SiC buffer layer and was improved by increasing their thickness. This indicates that the crystalline quality trend for thick GaN growth is different from that for initial GaN growth. Moreover, the GaN sample with a 100-nm-thick SiC buffer layer had a low initial curvature, and the crystalline qualities on GaN(0004) and ð1012Þ planes were 389 and 460 arcsec for 4.5-µm-thick GaN growth, respectively.

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“…where 𝑞 is the unit charge, 𝑘 is the Boltzmann constant, 𝑇 is the absolute temperature, 𝑅 P is the parallel resistance, 𝑅 S is the series resistance, and 𝐼 S is the saturation current. [12,13] In our devices, the numerical values of the parallel resistance 𝑅 P are in the order of 10 11 , which is several orders greater than the value of 𝑅 S . Thus, we can ignore the effects of 𝑉 /𝑅 P and 𝑅 S /𝑅 P when calculating the ideality factor, and…”

mentioning

confidence: 79%

The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs

Ma¹,

Dong²,

Chen³

et al. 2013

Chinese Phys. Lett.

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The effects of a polarization field on the current transport mechanisms in ultraviolet light emitting diodes (UV-LEDs) are studied by analyzing forward current-voltage (𝐼-𝑉 ) characteristics based on the experimental data and theoretical simulation. The results indicate that polarization electric field suppresses the diffusion current and meanwhile enhances the tunneling current in the metal-face UV LEDs under forward bias. The presence of a large polarization field in the deep UV-LEDs is responsible for the current transport mechanism dominated by the tunneling process at a moderate forward bias.

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Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)

Cited by 9 publications

References 10 publications

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs

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