Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Abstract

The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si–N bonding at the interface gradually transforms to Si–O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si–O–Al bonding state can be detected in the 900 °C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

“…Understandably, kinds of crystal defects in the ALD deposited AlN film were the main reasons. Further XPS measurement well indicated the typical O related defects (Al–O bond at binding energy of 74.6 eV and N-Al-O bond at a binding energy of 398.8 eV) for the ALD deposited AlN film, which shows similar results as that reported in the previous work 37 , 38 , as shown in Fig. 2e and f for the Al 2 p and N 1 s spectra.…”

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

“…Encouragingly, a homogeneous N-doping profile can be observed in the entire AlON film (Figure b). It is known that this kind of nitrogen distribution can hardly be achieved by the conventional growth method including annealing the ALD-grown Al 2 O 3 or AlN film in NH 3 or O 2 environment. , In addition, it is noted that the obtained AlON film is oxygen-rich, although the NH 3 :O 2 ratio is as high as 95:5 during the film growth. This is mainly due to much higher reactivity of oxygen plasma than that of the ammonia one.…”

“…13 There have been investigations on indirect growth of the AlON utilizing the ALD. 6,10,14 However, as mentioned in the last paragraph, the doping homogeneity became a problem. Theoretically, the direct growth of the AlON utilizing ALD can be achieved by alternate growth of the AlN and the Al 2 O 3 layers.…”

“…Taking the advantage of its layer-by-layer growth mechanism, a precise film thickness control can be achieved even for films thinner than 5 nm. , Meanwhile, the obtained films are pinhole-free . There have been investigations on indirect growth of the AlON utilizing the ALD. ,, However, as mentioned in the last paragraph, the doping homogeneity became a problem. Theoretically, the direct growth of the AlON utilizing ALD can be achieved by alternate growth of the AlN and the Al 2 O 3 layers.…”

Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74

“…41,40,42,43 Thus far, there have been no reports on how high temperatures affect the band offset between SiO 2 and (In x Ga 1−x ) 2 O 3 . There have been a few previous studies done examining the annealing effects of dielectrics or other semiconductors on Ga 2 O 3 and (Al x Ga 1−x ) 2 O 3 , [44][45][46][47][48][49][50] but no work has been done on (In x Ga 1−x ) 2 O 3 based systems. Yadav et al 45 found that the valence band offset between Ga 2 O 3 and Si increased with annealing at 600 °C.…”