The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs

Ma, Ji-Zhao; Dong, Kun; Chen, Dunjun; Lu, Hai; Chen, Peng; Zhang, Rong; Zheng, Youdou

doi:10.1088/0256-307x/30/6/068501

Cited by 3 publications

(2 citation statements)

References 24 publications

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“…This is due to the rapid development of the LED technologies. [1][2][3][4][5][6][7][8][9][10][11][12][13] Specifically, the progress in achieving internal quantum efficiency improvement and radiative efficiency enhancement, [2,14,15] hole transport improvement and efficiency-droop suppression in the LEDs leading to practical applications, [16][17][18][19][20][21] and the deep understanding of Auger process in nitride LEDs [22,23] have been the driving force in advancing the technologies. In order to further reduce the cost of LEDs and replace traditional lamps, the LEDs on Si substrates have attracted considerable interest, owing to many good properties of Si such as low cost, large scale, high quality, low hardness, and good thermal conductivity and electrical conduction.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Liu¹,

Wang²,

Yang³

et al. 2015

Chinese Phys. B

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Crack-free GaN/InGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer (TCL), which could not be applied in the conventional p-side-up LEDs due to the electrode-shading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 mA, in comparison to conventional LEDs on Si.

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Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Liu¹,

Wang²,

Yang³

et al. 2015

Chinese Phys. B

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“…However, some difficulties still remain in growing high quality, high-indium InGaN multiple quantum wells (MQWs), because of the large stresses, high threading dislocation density in MQWs, low indium incorporation efficiency, and so on. Strain-induced piezoelectric polarization and spontaneous polarization [1,2] bring in large internal electrostatic fields, [3] which causes the separation of electron and hole wave function, [4,5] resulting in low internal quantum efficiency. Meanwhile, due to the low cost and large scale, Si substrates have been extensively studied for the growth of GaN-based materials, but LEDs on Si substrates simultaneously face more challenges.…”

Section: Introductionmentioning

confidence: 99%

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Liu¹,

Yang²,

Xiang³

et al. 2015

Chinese Phys. B

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The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and AlGaN insertion layers (IL) respectively before the growth of MQWs in metal–organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. AlGaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with AlGaN IL were observed in the light images of the LEDs.

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Optical Performance of N-Face AlGaN Ultraviolet Light Emitting Diodes

Yu¹,

Li²,

Zhang³

et al. 2014

Chinese Phys. Lett.

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The optical property and injection efficiency of N-face AlGaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face AlGaN based UV-LEDs. A staircase electron injector is introduced in the N-face AlGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.

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The Effects of Polarization on the Current Transport Mechanisms for UV-LEDs

Cited by 3 publications

References 24 publications

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates

Optical Performance of N-Face AlGaN Ultraviolet Light Emitting Diodes

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