Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in AlxGa1−xAs/InGaAs (X=0.75) pseudomorphic high electron mobility transistors

Abstract

Metal–insulator–semiconductor (MIS) Schottky diodes on Al0.75Ga0.25As/In0.2Ga0.8As pseudomorphic high electron mobility transistors were produced using both photowashing and H2O2 treatments. The Schottky contact on a GaAs layer showed enhancement of the Schottky barrier height of 0.11 eV for the photowashing and 0.05 eV for the H2O2 treatment, respectively. After the photowashing treatment, the Ga oxide (Ga2O3) was dominantly created. In the meanwhile, two types of As oxide (As2O3,As5O2) were mainly produced by the H2O2 treatment, which were distributed uniformly over the GaAs surface. At the same oxide thickness, the formation of the Ga oxide after the photowashing treatment is more effective in enhancement of the Schottky barrier height. This is due to the fact that the Ga oxide was more favorable in the creation of a fixed interface state density, which is known as an origin for increase of the barrier height, compared to the As oxide in the GaAs MIS Schottky diode.

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

“…Schottky barrier diodes (SBDs) are of the most simple of the MS (metal-semiconductor) contact devices due to their technological importance [1][2][3][4][5][6][7]. In particular, the Schottky diodes have important applications in bipolar integrated circuits such as clamps, load resistor, couplers, and level shifters [8,9].…”