Summary In vivo optogenetics provides unique, powerful capabilities in the dissection of neural circuits implicated in neuropsychiatric disorders. Conventional hardware for such studies, however, physically tethers the experimental animal to an external light source limiting the range of possible experiments. Emerging wireless options offer important capabilities that avoid some of these limitations, but the current size, bulk, weight, and wireless area of coverage is often disadvantageous. Here, we present a simple but powerful setup based on wireless, near-field power transfer and miniaturized, thin flexible optoelectronic implants, for complete optical control in a variety of behavioral paradigms. The devices combine subdermal magnetic coil antennas connected to microscale, injectable LEDs, with the ability to operate at wavelengths ranging from ultraviolet to blue, green/yellow, and red. An external loop antenna allows robust, straightforward application in a multitude of behavioral apparatuses. The result is a readily mass-producible, user-friendly technology with broad potential for optogenetics applications.

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Hard and soft structural composites found in biology provide inspiration for the design of advanced synthetic materials. Many examples of bio-inspired hard materials can be found in the literature; far less attention has been devoted to soft systems. Here we introduce deterministic routes to low-modulus thin film materials with stress/strain responses that can be tailored precisely to match the non-linear properties of biological tissues, with application opportunities that range from soft biomedical devices to constructs for tissue engineering. The approach combines a low-modulus matrix with an open, stretchable network as a structural reinforcement that can yield classes of composites with a wide range of desired mechanical responses, including anisotropic, spatially heterogeneous, hierarchical and self-similar designs. Demonstrative application examples in thin, skin-mounted electrophysiological sensors with mechanics precisely matched to the human epidermis and in soft, hydrogel-based vehicles for triggered drug release suggest their broad potential uses in biomedical devices.

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.

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Articles you may be interested inAdvantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor Appl. Phys. Lett. 105, 093506 (2014); 10.1063/1.4893748Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template Appl. Phys. Lett. Strain on field effect transistors with single-walled-carbon nanotube network on flexible substrateThis paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages ($5 V) and with high gains ($30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min. V C 2014 AIP Publishing LLC.

Gd + ions were implanted at total doses of 3–6×1014cm2 into single-crystal GaN or AlN epilayers grown on sapphire substrates and annealed at 700–1000°C. The implanted Gd showed no detectable diffusion in either material after annealing, as measured by secondary ion mass spectrometry, corresponding to a diffusion coefficient <8×10−12cm2s−1. Under all annealing conditions, x-ray diffraction shows the formation of second phases. In the case of GaN, these include Gd3Ga2, GdN, and Gd, while for AlN only Gd peaks are observed. Both the GaN and AlN show high saturation magnetization after annealing at 900°C (∼15emucm−3 for GaN and ∼35emucm−3 for AlN). The magnetization versus temperature characteristics of the Gd-implanted GaN show a blocking behavior consistent with the presence of precipitates, whereas the AlN shows a clear difference in field-cooled and zero-field-cooled magnetization to above room temperature which may also be due to Gd inclusions.