Ohmic contact formation mechanism of Ni on n-type 4H–SiC

Han, Sang Youn; Kim, Ki Hong; Kim, Jong Kyu; Jang, Ho Won; Lee, Kwang Ho; Kim, Nam Kyun; Kim, Eun Dong; Lee, Jong‐Lam

doi:10.1063/1.1404998

Cited by 137 publications

(76 citation statements)

References 10 publications

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“…13,18,23 Besides, creating vacancies at interface region to improve the nature of interface with Ohmic contact, low Schottky Barrier and high electronic transparency have been used in many metal-semiconductors contacts. 26,27 Thus, the formation of vacancy defects in monolayer MoS 2 is a possible method to achieve high quality Au-MoS 2 contact with Ohmic character.…”

Section: 22mentioning

confidence: 99%

Role of vacancies in tuning the electronic properties of Au-MoS2 contact

Zhang

et al. 2015

AIP Advances

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Understanding the electronic properties between molybdenum disulfide (MoS2) and metal electrodes is vital for the designing and realization of nanoelectronic devices. In this work, influence of intrinsic vacancies in monolayer MoS2 on the electronic structure and electron properties of Au-MoS2 contacts is investigated using first-principles calculations. Upon formation of vacancies in monolayer MoS2, both tunnel barriers and Schottky Barriers between metal Au and monolayer MoS2 are decreased. Perfect Au-MoS2 top contact exhibits physisorption interface with rectifying character, whereas Au-MoS2 contact with Mo-vacancy shows chemisorption interface with Ohmic character. Partial density of states and electron density of defective Au-MoS2 top contacts are much higher than those of perfect one, indicating the lower contact resistance and higher electron injection efficiency of defective Au-MoS2 top contacts. Notably, Mo-vacancy in monolayer MoS2 is beneficial to get high quality p-type Au-MoS2 top contact, whereas S-vacancy in monolayer MoS2 is favorable to achieve high quality n-type Au-MoS2 top contact. Our results provide guidelines for designing and fabrication of novel 2D nanoelectronic devices.

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Section: 22mentioning

confidence: 99%

Role of vacancies in tuning the electronic properties of Au-MoS2 contact

Zhang

et al. 2015

AIP Advances

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“…Actually, Han et al [3,4,8] and Kuchuk et al [9] indicated the presence of NiSi right above the C1 band for 950°C annealing and at the substrate interface for 1050°C annealing, respectively. Probably, the NiSi/4H-SiC system might be lower in φ B than the Ni 2 Si/4H-SiC system.…”

Section: Materials Science Forum Vols 679-680 467mentioning

confidence: 99%

“…This steep temperature dependence of ρ C for contacts in the n++ region cannot be explained by the carbon vacancy induced donor model (Vc model) proposed by Han and his coworkers [3,4] because heavy doping eclipses the increased donor effect. Figure 3 shows the interface between the Ni-slicide and the epilayer (n++ region) captured by high-resolution XTEM, when the Ni (TLM) electrode was annealed at 1000°C.…”

mentioning

confidence: 99%

Toward a Better Understanding of Ni-Based Ohmic Contacts on SiC

Tanimoto

Miyabe

Shiiyama

et al. 2011

MSF

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There is still little consensus regarding why low contact resistivity is achieved when Ni on n-type 4H- and 6H-SiC is annealed at temperatures of more than above 950°C. The objective of this paper is to provide an answer concerning to this question. It is has been reported that even Ni-based contacts formed in the n++ region exhibited a steep reduction of contact resistivity in an annealing temperature range > 900°C. This effect reduction cannot be explained by the carbon vacancy induced donor model (Vc model) proposed by Han and his coworkers [Appl. Phys. Lett., Vol. 79, p. 1816 (2001)]. And, it is clarified that It was observed that the surface of substrates annealed at 1000°C was not covered with not Ni2Si but with a thin layer of NiSi. Finally, a plausible model is proposed that as the result of annealing at higher temperatures, results in the formation of the a NiSi/SiC system is builtat the substrate interface, resulting in significant reduction in low causing contact resistivity to be reduced significantly.

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“…As a candidate material for micro or nano-electronics, the nickel silicide formed at the Ni-SiC interface could provide lowresistivity metal contact and interconnect [21][22][23] between the semiconducting SiC whisker and the carbon nanotube. The contact or interconnect quality here should be further investigated by adjusting the reaction temperature and time, the yield of the silicides and the quantity of residual catalysts at the connecting areas.…”

Section: Ni-w-p Catalyzed Growth Of Carbon Nanotubes On Sic Whiskersmentioning

confidence: 99%