Contacts to ZnO

Ip, K.; Thaler, G. T.; Yang, Hyucksoo; Han, Sang Youn; Li, Yuanjie; Norton, D. P.; Pearton, S. J.; Jang, Soohwan; Ren, F.

doi:10.1016/j.jcrysgro.2005.10.059

Cited by 130 publications

(56 citation statements)

References 64 publications

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“…[2][3][4][5][6][7] Metals on semiconductors seldom obey the Schottky-Mott theory, i.e., their Schottky barrier heights are not proportional to their work functions. 8 Previous ZnO surface studies revealed the importance of surface adsorbates, near-interface native defects, and thermally induced interface chemical interactions at metal/ZnO contacts. 3,9,10 Stabilization mechanisms of Zn͑0001͒-or O͑0001͒-terminated faces are still controversial, yet few experimental studies compare them.…”

mentioning

confidence: 99%

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Dong

Fang

Look

et al. 2008

Applied Physics Letters

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Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep level transient spectroscopy of ZnO (0001) Zn- and (0001¯) O-polar surfaces and metal interfaces show systematically higher Zn-face near band edge emission and lower near-surface defect emission. Even with remote plasma decreases of the 2.5 eV near-surface defect emission, (0001)-Zn face emission quality still exceeds that of (0001¯)-O face. Ultrahigh vacuum-deposited Au and Pd diodes on as-received and O2/He plasma-cleaned surfaces display a strong polarity dependence that correlates with defect emissions, traps, and interface chemistry. A comprehensive model accounts for the polarity-dependent transport properties and their correlations with carrier concentration profiles.

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mentioning

confidence: 99%

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Dong

Fang

Look

et al. 2008

Applied Physics Letters

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“…Especially a reliable and reproducible method for achieving controllable p-type doping in ZnO has not yet been well accomplished [5]. In addition, rectifying contacts (Schottky contacts) are not straightforward to realize and high barrier reliable Schottky contacts with low reverse leakage current are 2 still lacking [15]. The accomplishment of p-doping and of good contacts, both rectifying and Ohmic ones, are crucial for the realization of the possible applications discussed above.…”

Section: Motivation and General Backgroundmentioning

confidence: 99%

“…In addition, from the carrier concentration vs. temperature dependence it is possible to deduce both the concentration and activation energies of the main donors and acceptors. Moreover SCs are not needed to perform the T DH characterization and at least in case of ZnO this is an advantage since high quality Ohmic contacts are accessible and have been reported by a number of groups [15]. On the other hand, results extracted from T DH measurements represent an integral average over the whole sample, while from other techniques employing SCs, like admittance and deep level transient spectroscopy, information on the spatial distribution of the levels can be deduced as well.…”

Section: Temperature Dependent Hall Effectmentioning

confidence: 99%

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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“…In previous studies, many electrode materials, such as Ti, Al, Pt, and Au have been selected for testing ohmic contact to ntype ZnO [11]. It is important to improve the contact resistance between the source/drain and channel layer to enhance device properties, such as the field effect mobility, which determines device performance, as well as the subthreshold slope (S.S) and switching speeds [12].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

Lee¹,

Han²,

Lee

2016

Transactions on Electrical and Electronic Materials

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A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10 2 Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm , and on/off current ratio of 9.7×10 6 A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

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Contacts to ZnO

Cited by 130 publications

References 64 publications

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

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