The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

“…When the AC signal corresponds to this time constant, the peak loss associated with the interface trap levels then occurs. 31 If the frequency is slightly different to the time constant, then the losses are reduced because either the trap levels do not respond or the response occurs at a different frequency, and therefore a peak loss as a function of frequency is achieved. 27,31,32 The values of the density of interface states and the interface trap time constant were obtained using the C-f and G p /x-x measurements and were determined to be 1.9 Â 10 8 cm À2 eV À1 and 0.5 ls, respectively.…”

Current–voltage and capacitance–voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

“…Çakar et al have determined interface properties of Au/ PYR-B/p-Si/Al contact. They have found that the interface-state density values vary from 4.21 × 10 13 to 3.82 × 10 13 cm − 2 eV − 1 [33]. In another study, Aydin et al have investigated the interface-state density properties of the Sn/methyl-red/p-Si/Al diode and interfacestate density was found to vary from 1.68 × 10 12 cm −2 eV − 1 to 1.80 × 10 12 cm − 2 eV − 1 [34].…”

Electrical Properties of Organic–Inorganic Semiconductor Device Based on Rhodamine-101

“…Many plastic electronic devices such as organic thin-film transistors, organic light-emitting diodes, printable circuits, organic capacitors, and organic photovoltaic devices have received much attention in the past few years. [1][2][3][4][5][6][7] In spite of the recent technological success of organic materials, we have relatively little detailed understanding of charge injection and transport processes in organic semiconductor devices and, therefore, analyzing these processes is crucial, as mentioned in Refs. 6-13.…”

“…Moreover, control over the electronic properties of semiconductors and metals has been a central issue for their use in optoelectronics devices. [9][10][11][12][13][14][15][16] So far, many attempts have been made to realize formation of rectifying contact or modification of barrier height or continuous control of barrier height using an organic semiconductor layer [5][6][7][8][9][10][11][12][13][14][15][16] or a chemical passivation procedure at certain metal/inorganic semiconductor interfaces, [13][14][15] and to determine characteristic parameters of organic films. [13][14][15][16][17][18] We have determined optical energy gaps of rhodamine-101 (Rh101) from absorption spectrum in the wavelength range of 400 nm to 700 nm in the present study.…”