Single- and few-layered InSe flakes are produced by the liquid-phase exfoliation of β-InSe single crystals in 2-propanol, obtaining stable dispersions with a concentration as high as 0.11 g L . Ultracentrifugation is used to tune the morphology, i.e., the lateral size and thickness of the as-produced InSe flakes. It is demonstrated that the obtained InSe flakes have maximum lateral sizes ranging from 30 nm to a few micrometers, and thicknesses ranging from 1 to 20 nm, with a maximum population centered at ≈5 nm, corresponding to 4 Se-In-In-Se quaternary layers. It is also shown that no formation of further InSe-based compounds (such as In Se ) or oxides occurs during the exfoliation process. The potential of these exfoliated-InSe few-layer flakes as a catalyst for the hydrogen evolution reaction (HER) is tested in hybrid single-walled carbon nanotubes/InSe heterostructures. The dependence of the InSe flakes' morphologies, i.e., surface area and thickness, on the HER performances is highlighted, achieving the best efficiencies with small flakes offering predominant edge effects. The theoretical model unveils the origin of the catalytic efficiency of InSe flakes, and correlates the catalytic activity to the Se vacancies at the edge of the flakes.

We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed.

We have investigated the electronic response of single crystals of indium selenide by means of angle-resolved photoemission spectroscopy, electron energy loss spectroscopy and density functional theory. The loss spectrum of indium selenide shows the direct free exciton at ~1.3 eV and several other peaks, which do not exhibit dispersion with the momentum. The joint analysis of the experimental band structure and the density of states indicates that spectral features in the loss function are strictly related to single-particle transitions. These excitations cannot be considered as fully coherent plasmons and they are damped even in the optical limit, i.e. for small momenta. The comparison of the calculated symmetry-projected density of states with electron energy loss spectra enables the assignment of the spectral features to transitions between specific electronic states. Furthermore, the effects of ambient gases on the band structure and on the loss function have been probed.

Gallium selenide (GaSe) is a van der Waals semiconductor widely used for optoelectronic devices, whose performances are dictated by bulk properties, including band-gap energy. However, recent experimental observations that the exfoliation of GaSe into atomically thin layers enhances performances in electrochemistry and photocatalysis have opened new avenues for its applications in the fields of energy and catalysis. Here, it is demonstrated by surface-science experiments and density functional theory (DFT) that the oxidation of GaSe into Ga 2 O 3 , driven by Se vacancies and edge sites created in the exfoliation process, plays a pivotal role in catalytic processes. Specifically, both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are energetically unfavorable in pristine GaSe, due to energy barriers of 1.9 and 5.7-7.4 eV, respectively. On the contrary, energy barriers are reduced concurrently with surface oxidation. Especially, the Heyrovsky step (H ads + H + + e − → H 2) of HER becomes energetically favorable only in sub-stoichiometric Ga 2 O 2.97 (−0.3 eV/H +). It is also discovered that the same mechanisms occur for the case of the parental compound indium selenide (InSe), thus ensuring the validity of the model for the broad class of III-VI layered semiconductors.

Layered semiconductors of the IIIA-VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness-dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin-film field effect transistors and phototransistors due to its high intrinsic mobility (>10 2 cm 2 V −1 s −1 ) and the direct optical transitions in an energy range suitable for visible and near-infrared light detection. A key requirement for the exploitation of large-scale (opto)electronic applications relies on the development of low-cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high-throughput device fabrication methods. Here, a β polymorph of indium selenide (β-InSe) is exfoliated in isopropanol and spray-coated InSe-based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W −1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate-dependent conduction with an n-channel transistor behavior.Overall, this study establishes that liquid phase exfoliated β-InSe is a valid candidate for printed high-performance photodetectors, which is critical for the development of industrial-scale 2D material-based optoelectronic devices.

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