Electrical and switching properties of amorphous films based on the Ge–Se–Tl system

Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

“…It is observed thatV th increases linearly with the film thickness. The observed relation between the thickness andV th agrees well with the previous observations for different amorphous semiconductor materials [30,31]. Fig.…”

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

“…The obtained values of this ratio are given in Table 4. It is found that the mean value of the ratioε V th /E σ2 ≈ 0.5, agrees with that obtained theoretically on the basis of the electrothermal model for the switching process [8,9] and those obtained before for other semiconducting compositions [15,[17][18][19].…”

Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

“…Thus, the ratioε V th / E was calculated using the corresponding values of E , are given in Table 4. It is found the ratioε V th /E ≈ 0.5 agrees with that obtained theoretically on the basis of the electrothermal model for the switching process [9,10] and those obtained before for other semiconducting compositions [39][40][41][42].…”