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A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the I V conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current I sc and open-circuit voltage V oc , power P = I V , maximum power P max , maximum current I M and maximum voltage V M were calculated at different light intensities. The dynamic I V characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.

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