Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

Yahia, I.S.; Fadel, M.; Sakr, G.B.; Shenouda, S.S.

doi:10.1016/j.jallcom.2010.08.021

Cited by 25 publications

(19 citation statements)

References 38 publications

(42 reference statements)

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“…According to our knowledge, there is no data reported for the electrical and switching properties of ZnGa 2 Te 4 thin film. As a trend of our laboratory, the previous work on ZnGa 2 Se 4 defect chalcopyrite suggested that it is a high stable material and exhibited a memory switching [12].…”

Section: Introductionmentioning

confidence: 81%

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Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Section: Introductionmentioning

confidence: 81%

“…It is observed that both values of DE r and DE R are approximately in the same order. The heat transport equation is given by [12,23]:…”

Section: Switching Phenomenonmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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“…The lack of cubic symmetry provides special properties to this family of semiconductors with important applications in optoelectronics, solar cells, and non-linear optics that has been considerably reviewed. [1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements.…”

Section: Introductionmentioning

confidence: 99%

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Vilaplana

Gomis

Pérez-González

et al. 2013

Journal of Applied Physics

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High-pressure Raman scattering measurements have been carried out in ZnGa 2 Se 4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. V C 2013 AIP Publishing LLC.

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“…ZnGa 2 Se 4 is one of these semiconductors, which is a photosensitive material [5] and it can be used for phase change memories (PCMs) [6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

Yahia

Fadel

Sakr

et al. 2011

Journal of Alloys and Compounds

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Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

Cited by 25 publications

References 38 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

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