p-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

Abstract

A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the I V conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current I sc and open-circuit voltage V oc , power P = I V , maximum power P max , maximum current I M and maximum voltage V M were calculated at different light intensities. The dynamic I V characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.

Electrical Properties of p-ZnTe/n-CdTe Photodiodes

“…In addition, the theoretical limit for the solar energy conversion efciency is relatively high it exceeds 20%. Because of these reasons the p-ZnTe/n-CdTe heterojunctions are interesting candidates for solar applications [5,6].…”

Characterization of mono-crystalline silicon solar cell

“…The short current circuit increases linearly while the open circuit voltage increase exponentially (i.e. V oc ≈ lnL) with the increase of the illumination intensities [15,16]. The variation in the current under different of illumination intensities was expressed as [17][18][19]:…”

Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

“…The magnitude of both resistances decreases with increasing temperature. This effect is probably associated with the increase of the free carriers density available in the junction, due to either the bond breaking effect or the detrapping mechanism [14,15]. It is evaluated that at the forward bias voltages, the diode exhibits two conduction mechanisms operating in various bias voltage ranges.…”

“…In that case, the current-voltage characteristics of the diode can be analyzed by the following relation [14]:…”

“…The l value is decreased and T t value is increased with increasing temperature. For the diode, the total concentration of trap states is obtained by the following relation [14]:…”