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Cited by 60 publications
(17 citation statements)
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“…[1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements. To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] In particular, ZnGa 2 Se 4 has a high photosensitivity and strong luminescence, 2 can be used for phase change memories, 5 and has been proposed as a candidate for electronic device applications forming part of heterojunction diodes. 6 The properties of ZnGa 2 Se 4 have been characterized by x-ray diffraction (XRD), 7,8 neutron and electron diffraction, [9][10][11][12] extended x-ray absorption fine structure, 13 infrared (IR), 14,15 Raman spectroscopy, [15][16][17][18][19][20][21][22][23][24] and magnetic 25 measurements. To this respect, while some authors claim that ZnGa 2 Se 4 crystallizes in the tetragonal ordered defect chalcopyrite (DC) structure with space group (SG) I-4 [see Fig.…”
Section: Introductionmentioning
confidence: 99%
“…The nanostructure of the ZnGa 2 Se 4 was confirmed by means of X-ray diffraction (XRD) and atomic force microscope (AFM) in previous work [8]. For XRD analysis of the investigated sample, Philips X-ray diffractometer (model X'-Pert) was used for the measurement by utilizing monochromatic Cu K α radiation operated at 40 kV and 25 mA.…”
Section: Methodsmentioning
confidence: 81%
“…The electrical properties of ZnGa 2 Se 4 thin films have been previ- * corresponding author; e-mail: dr_isyahia@yahoo.com, dr_isyahia@hotmail.com, isyahia@gmail.com ously studied in our laboratory [7]. Also, we analyzed the current-voltage characteristics of Al/p-ZnGa 2 Se 4 / n-Si/Al nanocrystalline heterojunction diode [8]. Impedance characteristics provide a basic mechanism of electrical properties of the device.…”
Section: Introductionmentioning
confidence: 99%
“…The Schottky barrier heights of the diodes were deduced from I-V characteristics, which were analyzed by using the thermionic emission model [7,43]:…”
Section: Resultsmentioning
confidence: 99%