Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

Fadel, M.; Hegab, N.A.; Yahia, I.S.; Salem, A.M.; Farid, A. S.

doi:10.1016/j.jallcom.2011.04.093

Cited by 23 publications

(7 citation statements)

References 37 publications

(55 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar observed variations have been reported in the literature. 25,27,28,31 The obtained linear relationships lnV th versus 10 3 /T satisfy the following relationship: 23,25 …”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 84%

“…This ratio agrees with that obtained theoretically on the basis of the electrothermal model for the switching process. 23,25,31 The observed strong temperature dependence of V th can be understood in terms of the electro-thermal process due to the Joule heating effect, since the TlBiSe 2 compound has strong temperature-dependent electrical conductivity, as explained above.…”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 84%

“…It is evident that there is one type of conduction mechanism contributing to the DC conductivity which has a single value of activation energy. 25,26 Switching Phenomenon…”

Section: Electrical Conductivitymentioning

confidence: 99%

See 2 more Smart Citations

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Kalkan

Baş

2015

Journal of Elec Materi

View full text Add to dashboard Cite

The electrical conductivity of TlBiSe 2 narrow gap semiconductors prepared by the Bridgman-Stockbarger method was investigated. The temperature dependence of the electrical conductivity was measured to establish the dominant conductivity mechanism in a temperature range between 293 K and 373 K. The conduction activation energy has a single value indicating the existence of one type of conduction mechanism in the investigated temperature range. The electrical conductivity of the sample is controlled by a thermally activated mechanism. It was also found that these samples exhibit a current-controlled negative resistance and threshold switching. The value of the threshold voltage decreases exponentially with increasing temperature. The calculated ratio of the threshold energy to the activation energy is one half, and is derived from the electro-thermal model for the switching process. Therefore, the electrical switching in the investigated samples can be explained in terms of the electro-thermal model. A possible conduction mechanism in the pre-switching state of the sample associated with the space charge limited current is described.

show abstract

“…Similar observed variations have been reported in the literature. 25,27,28,31 The obtained linear relationships lnV th versus 10 3 /T satisfy the following relationship: 23,25 …”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 84%

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 84%

See 1 more Smart Citation

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Kalkan

Baş

2015

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Thus, the ac conduction in these complexes could be explained as correlated barrier hopping (CBH) between intimate valence alternation pairs (IVAP). 103,104 The maximum barrier height ( W m ) in this model can be calculated using the following equation: 105 Values of W m are presented in Table 6 . Clearly, the Ni( ii ) complex has the lowest maximum barrier height.…”

Section: Resultsmentioning

confidence: 99%

Co(ii), Ni(ii), Cu(ii) and Cd(ii)-thiocarbonohydrazone complexes: spectroscopic, DFT, thermal, and electrical conductivity studies

et al. 2021

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning that the individual band gaps of Sb 2 Se 3 and Sb 2 Te 3 lie in the range of 1.1–1.6 and 0.3 eV, respectively. Thus, the observed unusual change in the band gap reveals that Te inclusion tunes the Se/Sb ratio without alloy formation …”

Section: Results and Discussionmentioning

confidence: 99%

Mitigation of Surface Oxidation in Sb₂Se₃ Thin Films Via Te Doping: An Effective Strategy Towards Realization of Efficient Electronic Devices

Rahman

Zulfequar

2022

J. Phys. Chem. C

View full text Add to dashboard Cite

Sb2Se3 and Te-doped Sb2Se3 films of ∼250 nm film thickness were deposited using a facile thermal evaporation technique from the bulk powder synthesized via the melt quenching technique. Thermogravimetric analysis of pure and Te-doped Sb2Se3 alloys in bulk form indicates decomposition of the alloys in the 303–673 K temperature range. The X-ray diffraction pattern revealed single-crystalline orthorhombic phase stabilization of as-prepared alloys in bulk as well as in the annealed thin films. Phase formation is also evident in the recorded Raman spectra from the appearance of two peaks at ∼189 and 210 cm–1, which are ascribed to the Sb2Se3 Ag mode. The absorbance spectra of as-annealed pure Sb2Se3 and Te-incorporated Sb2Se3 films exhibit significant reduction with Te doping due to an increase in the optical band gap. The conductivity in as-annealed Sb2Se3 and (0.08%)Te-doped Sb2Se3 films recorded from 308 K (room temperature) to 392 K show a decrease in DC conductivity and activation energy with the insertion of Te in the Sb2Se3 system. Such a trend in conductivity and activation energy is attributed to arise as a result of structural changes as well as defect passivation enabled by Te insertion in the alloy. Interestingly, the DC conductivity is in the range of ∼10–7 Ω–1 cm–1 at 308.5 K, which is 10 times higher than that of the previously reported conductivity of Sb2Se3 films. Presently, the nonpreferential grain growth, undesirable deep-level defects, and surface oxidation in Sb2Se3 thin films are pressing issues that render them unsuitable for practical application in devices. Herein, this study brings to the fore a strategy to overcome these issues by doping Te in Sb2Se3 thin films, and hence it is a step forward towards the replacement of environmentally toxic CdTe-based devices.

show abstract

Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

Cited by 23 publications

References 37 publications

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Co(ii), Ni(ii), Cu(ii) and Cd(ii)-thiocarbonohydrazone complexes: spectroscopic, DFT, thermal, and electrical conductivity studies

Mitigation of Surface Oxidation in Sb₂Se₃ Thin Films Via Te Doping: An Effective Strategy Towards Realization of Efficient Electronic Devices

Contact Info

Product

Resources

About

Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

Cited by 23 publications

References 37 publications

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Co(ii), Ni(ii), Cu(ii) and Cd(ii)-thiocarbonohydrazone complexes: spectroscopic, DFT, thermal, and electrical conductivity studies

Mitigation of Surface Oxidation in Sb2Se3 Thin Films Via Te Doping: An Effective Strategy Towards Realization of Efficient Electronic Devices

Contact Info

Product

Resources

About

Mitigation of Surface Oxidation in Sb₂Se₃ Thin Films Via Te Doping: An Effective Strategy Towards Realization of Efficient Electronic Devices