Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Afifi, M. A.; Hegab, N.A.; Atyia, H.E.; Farid, A. S.

doi:10.1016/j.jallcom.2007.09.011

Cited by 28 publications

(17 citation statements)

References 18 publications

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“…This is because the density of lattice defects as vacancies, interstitials and dislocations, develops during the deposition of thin film, decreases with the increase of film thickness. Thus, the film resistance decreases while the conductivity increases with the increase of film thickness [18]. According to Mott and Davis [19], the activation energy alone does not provide any indication to whether conduction takes place in extended state above the mobility edge or by hopping in the localized state.…”

Section: Resultsmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Section: Resultsmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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“…This is because the density of lattice defects as vacancies, interstitials and dislocations, developed during the deposition of thin film are lowered with the increase of film thickness. Thus, film resistance is decreased and the conductivity is increased with the film thickness [24]. According to Mott and Davis [25], the activation energy alone does not provide any indication to whether the conduction takes place in the extended states near the mobility edge or by hopping in the localized states.…”

Section: Temperature Dependence Of the DC Electrical Conductivity Formentioning

confidence: 99%

Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

Yahia

Fadel

Sakr

et al. 2010

Journal of Alloys and Compounds

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“…This led to adapt and elab- * Corresponding author. orate models allowing the electronic properties of these materials to be described [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%