Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

Wang, Wei; Xu, Guangwei; Chowdhury, Delwar Hossain; Wang, Hong; Um, Jae Kwang; Ji, Zhuoyu; Gao, Nan; Zong, Zhiwei; Bi, Chong; Lu, Congyan; Lu, Nianduan; Banerjee, Writam; Feng, Jiafeng; Li, Ling; Kadashchuk, A.; Jang, Jin; Liu, Ming

doi:10.1103/physrevb.98.245308

Cited by 20 publications

(5 citation statements)

References 28 publications

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“…The S.S. of both SL-TFTs and DL-TFTs increase with decreasing temperature (Fig. 10 (a)), which is similar to the previous reports [18] [21]. Since the Fermi level decreases with decreasing temperature, more shallow states and donor states can be seen by the carriers (Fig.…”

Section: Dual Gate Operationsupporting

confidence: 88%

Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier

Chiu

Lee

et al. 2022

IEEE J. Electron Devices Soc.

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Section: Dual Gate Operationsupporting

confidence: 88%

Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier

Chiu

Lee

et al. 2022

IEEE J. Electron Devices Soc.

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“…At higher temperatures, the mobility is more governed by the thermal activation of carriers from the localized states to the conduction band. 28 This explains why PNDI-HTVT, PNDI-FTVT, and PNDI-ClTVT OTFTs showed different mobilities when operated at room temperature. The F and Cl substituents gave rise to higher E a , hindering the thermal activation of electrons from localized states to the conduction band and thus reducing the mobility in the corresponding devices.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In the transport regime, E a is connected with the energy difference between the localized charge carrier distribution and the conduction band edge. At higher temperatures, the mobility is more governed by the thermal activation of carriers from the localized states to the conduction band . This explains why PNDI-HTVT, PNDI-FTVT, and PNDI-ClTVT OTFTs showed different mobilities when operated at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Highly Ambient-Stable Organic Thin-Film Transistors Fabricated Using Naphthalene Diimide and Thienylene–Vinylene–Thienylene-Based n-Type Polymers with Different Electron-Withdrawing Groups

et al. 2020

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We designed, synthesized, and characterized a series of naphthalene diimide (NDI)-based polymers with pristine (H)-, fluorine (F)-, chlorine (Cl)-, and cyano (CN)-substituted thienylene−vinylene−thienylene (TVT) moieties. The theoretical and experimental results showed that a stronger electron-withdrawing group in the TVT unit reduces the energy of the lowest unoccupied molecular orbital (LUMO), which could enhance the air stability of NDI-based organic thin-film transistors (OTFTs). However, this improved stability was accompanied by a reduction in electron mobility to various degrees. The reason is that the F, Cl, and CN moieties increased the dihedral angles in the polymer structure and raised the activation energy and the width of density of states (DOS) in the device systems. We believe that a clear understanding of the mechanism will assist in the design of nchannel OTFTs with both high mobility and high ambient stability.

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“…3 within the temperature range from 175 K to 250 K, the activation energies E a for the hopping electrons are extracted to be 45.2 meV and 33.7 meV respectively for the curves at the gate voltages V g1 and V g2 . [31] According to Mott's theory, the activation energy E a for electron hopping is related to the constant density of states (DOS) g 0 at the Fermi level and the hopping distance r as [32] E a = 3/(4πg 0 r 3 ).…”

Section: Resultsmentioning

confidence: 99%

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors*

Guo¹,

Han²,

Zhao³

et al. 2019

Chinese Phys. B

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We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance g m peak in V g1 and valley in V g2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V g1 and V g2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

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Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

Cited by 20 publications

References 28 publications

Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier

Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier

Highly Ambient-Stable Organic Thin-Film Transistors Fabricated Using Naphthalene Diimide and Thienylene–Vinylene–Thienylene-Based n-Type Polymers with Different Electron-Withdrawing Groups

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors*

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