Increased cardiac contractility during fight-or-flight response is caused by β-adrenergic augmentation of Ca V 1.2 channels 1-4. In transgenic murine hearts expressing fully PKA phosphorylation-site-deficient mutant Ca V 1.2 α 1C and β subunits, this regulation persists, implying involvement of extra-channel factors. Here, we identify the mechanism by which β-adrenergic agonists stimulate voltage-gated Ca 2+ channels. We expressed α 1C or β 2B subunits conjugated to ascorbate-peroxidase 5 in mouse hearts and used multiplexed, quantitative proteomics 6,7 to track hundreds of proteins in proximity of Ca V 1.2. We observed that the Ca 2+ channel inhibitor Rad 8,9 , a monomeric G-protein, is enriched in the Ca V 1.2 micro-environment but is depleted during β-adrenergic stimulation. PKA-catalyzed phosphorylation of specific Ser residues on Rad decreases its affinity for auxiliary β-Users may view, print, copy, and download text and data-mine the content in such documents, for the purposes of academic research, subject always to the full Conditions of use:

We analyzed 20 chemosensory protein (CSP) genes of the silkworm Bombyx mori. We found a high number of retrotransposons inserted in introns. We then analyzed expression of the 20 BmorCSP genes across tissues using quantitative real-time polymerase chain reaction (PCR). Relatively low expression levels of BmorCSPs were found in the gut and fat body tissues. We thus tested the effects of endectocyte insecticide abamectin (B1a and B1b avermectins) on BmorCSP gene expression. Quantitative real-time PCR experiments showed that a single brief exposure to insecticide abamectin increased dramatically CSP expression not only in the antennae but in most tissues, including gut and fat body. Furthermore, our study showed coordinate expression of CSPs and metabolic cytochrome P450 enzymes in a tissue-dependent manner in response to the insecticide. The function of CSPs remains unknown. Based on our results, we suggest a role in detecting xenobiotics that are then detoxified by cytochrome P450 anti-xenobiotic enzymes.

The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor with lead substitution. The optimized transistors exhibit field-effect hole mobilities of over 50 cm2 V−1 s−1 and on/off current ratios exceeding 108, as well as high operational stability and reproducibility.

7180 wileyonlinelibrary.com IntroductionIn the past decade amorphous metaloxide thin-fi lm transistors (TFTs) have been studied in depth for applications in active-matrix organic light-emitting diodes (AMOLEDs), solar cells, biosensor arrays, and photodetectors. [ 1 ] Along with the rapid developments in display technology, highresolution and high-speed displays have become one of the growing trends. In this regard, energy consumption has turned out to be an inevitable issue especially for mobile, battery-powered applications. As a low-voltage operation of the oxide TFTs is demanded for practical applications, it is necessary to develop novel gate dielectrics for producing a large areal capacitance. [ 2 ] The achievements of low-voltage oxide TFTs have been extensively reported in recent works, including the use of inorganic high-k dielectrics, [ 3 ] organic self-assembled-monolayer dielectrics, [ 4 ] and electrolyte dielectrics. [ 5 ] Among these, the use of inorganic high-k dielectrics is the most attractive option as it simultaneously enables a low leakage current, through the use of a thicker fi lm, as well as a low-voltage operation. The high-k dielectrics can be prepared by various methods such as metal anodic oxidation method, [ 6 ] vacuum-based deposition, [ 7 ] and low-cost solution-based techniques. [ 8 ] [ 12 ] silicates, [ 13 ] etc.) that could potentially replace conventional dielectrics, such as SiO 2 and SiN x . To the best of our knowledge, there are few reports on the demonstration of scandium oxide (Sc 2 O 3 ) as the gate dielectric in TFT devices.As a high-k material Sc 2 O 3 has a dielectric constant of 14, a bandgap of 6.3 eV and an excellent thermal stability with Si. [ 14 ] In addition, Sc 2 O 3 has been found to possess a negative fi xed charge. This is benefi cial to obtain a positive threshold or turnon voltage for n-type TFTs that operate in the enhancement mode. [ 15 ] Concerning the CMOS architecture development based on solution processing, a wet step is inevitably involved. In this regard, the resistance to moisture absorption is another important , a large current ratio ( I on / I off ) of 2.7 × 10 7 and high stability. Moreover, as far as we know it is the fi rst time that solution-processed p-type oxide TFTs based on a high-k dielectric are achieved. The as-fabricated p-type CuO/ScO x TFTs exhibit a large I on / I off of around 10 5 and a hole mobility of 0.8 cm 2 V −1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution-processed p-type TFTs, which represents a great step towards the achievement of low-cost, all-oxide, and low-power consumption CMOS logics.