Proceedings of the 18th Annual ACM/SIGDA International Symposium on Field Programmable Gate Arrays 2010
DOI: 10.1145/1723112.1723158
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Efficient FPGAs using nanoelectromechanical relays

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Cited by 66 publications
(32 citation statements)
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“…Cell Architecture Figure 3 presents the three-dimensional view of two adjacent NEMsCAM cells located in the same column index of the CAM array. Since NEMs have the potential to be fully integrated with CMOS devices [9], we place them on top of the CMOS layer and substantially reduce the layout area. The SL wires run parallel to the BL wires, while the matchlines (ML) and wordlines (WL) are orthogonal to the BLs.…”
Section: A Circuit Operationsmentioning
confidence: 99%
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“…Cell Architecture Figure 3 presents the three-dimensional view of two adjacent NEMsCAM cells located in the same column index of the CAM array. Since NEMs have the potential to be fully integrated with CMOS devices [9], we place them on top of the CMOS layer and substantially reduce the layout area. The SL wires run parallel to the BL wires, while the matchlines (ML) and wordlines (WL) are orthogonal to the BLs.…”
Section: A Circuit Operationsmentioning
confidence: 99%
“…However, NEMs have relatively long mechanical switching delay [6] compared to the intrinsic delay of CMOS devices, and to this date, they suffer from low endurance [15]. To get the best of both worlds, researchers have combined NEMs and CMOS to build low-power and high performance circuits for critical components [9], [10].…”
Section: Introductionmentioning
confidence: 99%
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“…Various approaches have been taken to reduce this overhead. In [15], a nanoelectromechanical relay replaced the NMOS pass transistors in a switch matrix. More conventional approaches have tried to optimize the global interconnect architecture since their performance dominates the delay and energy of the FPGA [17]- [19].…”
Section: B Chip Implementationmentioning
confidence: 99%
“…Die-stacking introduces undesirable problems in terms of manufacturability, reliability and limit of the vertical integration density. Some researchers replace the pass transistors in the routing structure of FPGA with emerging memory elements integrated in metal layers with back-end-of-line (BEOL) compatible fabrication [20,21]. But the improvement is limited due to the small portion of pass transistors in the routing structure.…”
Section: B Recent Work On Fpgas Using Emerging Technologiesmentioning
confidence: 99%