In this work we present a low cost and scalable technique, via ambient pressure chemical vapor deposition (CVD) on polycrystalline Ni films, to fabricate large area ( approximately cm2) films of single- to few-layer graphene and to transfer the films to nonspecific substrates. These films consist of regions of 1 to approximately 12 graphene layers. Single- or bilayer regions can be up to 20 mum in lateral size. The films are continuous over the entire area and can be patterned lithographically or by prepatterning the underlying Ni film. The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.

Chemical sensors based on individual single-walled carbon nanotubes (SWNTs) are demonstrated. Upon exposure to gaseous molecules such as NO(2) or NH(3), the electrical resistance of a semiconducting SWNT is found to dramatically increase or decrease. This serves as the basis for nanotube molecular sensors. The nanotube sensors exhibit a fast response and a substantially higher sensitivity than that of existing solid-state sensors at room temperature. Sensor reversibility is achieved by slow recovery under ambient conditions or by heating to high temperatures. The interactions between molecular species and SWNTs and the mechanisms of molecular sensing with nanotube molecular wires are investigated.

Monolayer molybdenum disulfide (MoS2) is a two-dimensional direct band gap semiconductor with unique mechanical, electronic, optical, and chemical properties that can be utilized for novel nanoelectronics and optoelectronics devices. The performance of these devices strongly depends on the quality and defect morphology of the MoS2 layers. Here we provide a systematic study of intrinsic structural defects in chemical vapor phase grown monolayer MoS2, including point defects, dislocations, grain boundaries, and edges, via direct atomic resolution imaging, and explore their energy landscape and electronic properties using first-principles calculations. A rich variety of point defects and dislocation cores, distinct from those present in graphene, were observed in MoS2. We discover that one-dimensional metallic wires can be created via two different types of 60° grain boundaries consisting of distinct 4-fold ring chains. A new type of edge reconstruction, representing a transition state during growth, was also identified, providing insights into the material growth mechanism. The atomic scale study of structural defects presented here brings new opportunities to tailor the properties of MoS2 via controlled synthesis and defect engineering.

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS 2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS 2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS 2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-byside on a single sheet of bilayer MoS 2 . Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. Keywords: molybdenum disulfide (MoS 2 ), transition metal dichalcogenides (TMD), Two-dimensional (2D)electronics, integrated circuits, ring oscillator.2 Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2 ) 1 and other members of the transition metal dichalcogenides family, represents the ultimate scaling of material dimension in the vertical direction. Nano-electronic devices built on 2D materials offer many benefits for further miniaturization beyond Moore's Law 2,3 and as a high-mobility option in the emerging field of large-area and low-cost electronics that is currently dominated by low-mobility amorphous silicon 4 and organic semiconductors 5,6 . MoS 2 , a 2D semiconductor material, is also attractive as a potential complement to graphene 7,8,9 for constructing digital circuits on flexible and transparent substrates, while its 1.8 eV bandgap 10,11 is advantageous over silicon for suppressing the source-to-drain tunneling at the scaling limit of transistors 12 . Molybdenum disulfide (MoS 2 ) is a layered semiconductor from the transition metal dichalcogenides material family (TMD), MX 2 (M=Mo, W; X=S, Se, Te) 10,11,19,20 . A single molecular layer of MoS 2 consists of a layer of Mo atoms sandwiched between two layers of sulfur atoms by covalent bonds 10 . The strong intra-layer covalent bonds confer MoS 2 crystals excellent mechanical strength, thermal stability up to 1090 C in inert environment 21 , and a surface free of dangling bonds. On the other hand, the weak inter-layer Van der Waal's force allows single-or fewlayer MoS 2 thin films to be created through micro-mechanical cleavage technique 22 and through anisotropic 2D 3 growth by chemical vapor deposition 23,24 . This unique property of MoS 2 , and 2D ...

Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge1. Here, we show that when immersed in ionic solution, a layer of graphene becomes a new electrochemical structure we call a trans-electrode. The trans-electrode's unique properties are the consequence of the atomic scale proximity of its two opposing liquid-solid interfaces together with graphene's well known in-plane conductivity. We show that several trans-electrode properties are revealed by ionic conductance measurements on a CVD grown graphene membrane that separates two aqueous ionic solutions. Although our membranes are only one to two atomic layers2,3 thick, we find they are remarkable ionic insulators with a very small stable conductance that depends on the ion species in solution. Electrical measurements on graphene membranes in which a single nanopore has been drilled show that the membrane's effective insulating thickness is less than one nanometer. This small effective thickness makes graphene an ideal substrate for very high-resolution, high throughput nanopore-based single molecule detectors. The sensitivity of graphene's in-plane electronic conductivity to its immediate surface environment, as influenced by trans-electrode potential, will offer new insights into atomic surface processes and sensor development opportunities.

Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.

Graphene is a monolayer of carbon atoms packed into a two-dimensional (2D) honeycomb crystal structure, which is a special material with many excellent properties. In the present study, we will discuss the possibility that graphene can be used as a substrate for enhancing Raman signals of adsorbed molecules. Here, phthalocyanine (Pc), rhodamine 6G (R6G), protoporphyin IX (PPP), and crystal violet (CV), which are popular molecules widely used as a Raman probe, are deposited equally on graphene and a SiO(2)/Si substrate using vacuum evaporation or solution soaking. By comparing the Raman signals of molecules on monolayer graphene and on a SiO(2)/Si substrate, we observed that the intensities of the Raman signals on monolayer graphene are much stronger than on a SiO(2)/Si substrate, indicating a clear Raman enhancement effect on the surface of monolayer graphene. For solution soaking, the Raman signals of the molecules are visible even though the concentration is low to 10(-8) mol/L or less. What's more interesting, the enhanced efficiencies are quite different on monolayer, few-layer, multilayer graphene, graphite, and highly ordered pyrolytic graphite (HOPG). The Raman signals of molecules on multilayer graphene are even weaker than on a SiO(2)/Si substrate, and the signals are even invisible on graphite and HOPG. Taking the Raman signals on the SiO(2)/Si substrate as a reference, Raman enhancement factors on the surface of monolayer graphene can be obtained using Raman intensity ratios. The Raman enhancement factors are quite different for different peaks, changing from 2 to 17. Furthermore, we found that the Raman enhancement factors can be distinguished through three classes that correspond to the symmetry of vibrations of the molecule. We attribute this enhancement to the charge transfer between graphene and the molecules, which result in a chemical enhancement. This is a new phenomenon for graphene that will expand the application of graphene to microanalysis and is good for studying the basic properties of both graphene and SERS.

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.