Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

Abstract

Abstract-The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.

Extraordinarily high drive currents in asymmetrical double-gate MOSFETs

“…Extended gate-gate charge coupling and the 'dynamic threshold voltage' [9] of the asymmetrical DG MOSFET underlie its extraordinary current, which can be explained by analytical characterizations of the integrated inversion charge (Q i ) in both devices. For the symmetrical DG MOSFET, integration of the 1D Poisson equation from the front surface to the center of the Si film (where the transverse electric field is zero) yields [10] …”

Experimental determination of the effective mobility in NMOSFETs: a comparative study

“…Traditionally, surface potential has been used but, as is known, this is not the potential seen by electrons in the channel. In fact, as some of the authors have recently shown in [5], the eects of the penetration of the channel into the semiconductor are more relevant in deep-submicrometer devices where this magnitude is not negligible versus the oxide thickness. Hence, some magnitudes should be corrected by the inversion-layer centroid in order to take this eect into account.…”

“…[5], since the oxide capacitance must be corrected to include the eect of the inversion layer centroid for thin oxide devices, as is usual in current technology.…”

Accurate modeling of Metal/HfO2/Si capacitors

“…On the other hand, it is known that the charge centroid is related to the total gate capacitance [7], and therefore the results shown in Fig. 1 can be directly applied to C-V calculation of the device.…”