The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO 2 interface. A quasi-two-dimensional treatment of the interaction between a neutral near-interface oxide trap and an electron in the subband of the inversion layer has been developed to obtain expressions for the capture and emission times where the influence of the trap parameters ͑energy depth, distance to the interface, and electron-phonon coupling factor͒ is clearly shown. This analysis combines multiphonon-emission theory, tunnel transition probability and the electrostatic Coulomb barrier effect, allowing us to reproduce experimental data for traps in different devices, temperatures, and bias conditions. As a result, trap distances to the interface, trap energy levels, and electron-phonon couplings have been calculated. The character of single electron transitions in this process let us show that the ground and first excited subbands, with similar capture and emission times, are the most important contributors to the phenomenon. ͓S0163-1829͑97͒07039-2͔
A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si( 100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out. 924
A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps ͑energy level and concentration͒ and the Huang-Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler-Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied.
The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is thin enough ͑thinner than 10 nm͒ the presence of the buried interface plays a very important role, both by modifying the surface roughness scattering rate due to the gate interface, and by itself providing a non-negligible scattering rate. The usual surface roughness scattering model in bulk silicon inversion layers is shown to overestimate the effect of the surface-roughness scattering due to the gate interface as a consequence of the minimal thickness of the silicon layer. In order to account for this effect, an improved model is provided. The proposed model allows the evaluation of the surface roughness scattering rate due to both the gate interface and the buried interface. Once the scattering rates are evaluated, electron mobility is calculated by the Monte Carlo method. The effect of the buried interface roughness on electron mobility is carefully analyzed by changing the height of the roughness. The effect of the silicon layer thickness on this scattering mechanism is also considered.
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