A comprehensive model for Coulomb scattering in inversion layers

Gámiz, F.; López‐Villanueva, J. A.; Jiménez-Tejada, J.A.; Melchor, I.; Palma, A.

doi:10.1063/1.356448

Cited by 85 publications

(73 citation statements)

References 34 publications

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“…Siggia and Kwok [21] developed a screening model that takes into account the contribution of several subbands. This approach has been followed by some authors for transport calculation in the approximation of small scattering angles [19,22,23]. A description of multi subband effects has been developed even for device simulation at the price of a complicated and computationally demanding technique [13].…”

Section: Impurity Scatteringmentioning

confidence: 99%

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

Monsef

Dollfus

Galdin‐Retailleau

et al. 2004

Journal of Applied Physics

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The electron transport in the two-dimensional gas formed in tensile-strained Si 1-x Ge x /Si/Si 1-x Ge x heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm 2 /Vs in highly-doped structures and 2800 cm 2 /Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-doped supply layers. Then the electron transport is investigated in a gated modulation-doped structure in which the contribution of parasitic paths is negligible. The mobility is shown to be higher than in comparable ungated structures and dependent on the gate voltage, as a result of the electron density dependence of remote impurity screening.

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Section: Impurity Scatteringmentioning

confidence: 99%

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

Monsef

Dollfus

Galdin‐Retailleau

et al. 2004

Journal of Applied Physics

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“…The electron mobility depends on both the longitudinal and transverse electric fields. The effect of the transverse electric field is obtained by calculating the electron mobility by Monte Carlo simulation [17]- [19]. The effect of the longitudinal electric field is included in the simulation by the expression (2) where is the low-field or ohmic mobility, which includes the dependence of the transverse electric field, and is the saturation electron velocity.…”

Section: Device Simulationmentioning

confidence: 99%

“…Furthermore, since the transverse-electric-field profile varies along the channel, this variation must be taken into account when the mobility in each subchannel is considered. In this work, we have used accurate results of mobility obtained by one-electron Monte Carlo simulation, taking into account the phonon and surfaceroughness scattering and the Coulomb scattering both from the doping impurities and the oxide and interface charges [17]- [19].…”

Section: A Starting Pointmentioning

confidence: 99%

“…3 with different values of . Mobility curves were evaluated by a one-electron Monte Carlo simulation detailed elsewhere [17]- [19], taking into account the actual doping profile both to solve the Poisson and Schroedinger equations, and to evaluate Coulomb scattering due to the doping impurities. A pronounced enhancement in the electron mobility can be observed when only a 300-Å thick lowdoped zone is added.…”

Section: Stepped Doping Profilementioning

confidence: 99%

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Study of the effects of a stepped doping profile in short-channel MOSFETs

López‐Villanueva

Gamiz

Roldán

et al. 1997

IEEE Trans. Electron Devices

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Abstract-The performance of a stepped doping profile for improving the short-channel behavior of a submicrometer MOS-FET has been analyzed in detail by using a quasi-two-dimensional (quasi-2-D) MOSFET simulator including inversion-layer quantization coupled with a one-electron Monte Carlo simulation. Several second-order effects, such as mobility degradation both by bulk-impurity and interface traps, carrier-velocity saturation, and channel-length modulation, have been included in the simulator. Very good agreement between experimental and simulated results are obtained for short-channel transistors. It has been shown that including a low-doped zone of convenient thickness next to the interface over a high-doping substrate improves both the electron mobility and the threshold voltage of the device, while avoiding short-channel effects. The use of simulation has allowed us to study certain kinds of devices without needing to make them.

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“…This longitudinal electric field causes the inversion-layer electrons to drift in the direction parallel to the interface, undergoing different scattering mechanisms. The electron dynamics are simulated by the one-electron Monte Carlo method, described elsewhere [14]- [16]. To do so, the trajectory of one-electron motion is followed for a long period, with the average drift velocity being calculated from the history of the electron motion for each longitudinal electric field value.…”

Section: Monte Carlo Simulationmentioning

confidence: 99%

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

Gamiz

López‐Villanueva

Roldán

et al. 1998

IEEE Trans. Electron Devices

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Abstract-Electron mobility in extremely thin-film siliconon-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si-SiO 2 interfaces is considered. The Boltzmann transport equation is solved by the Monte Carlo method. The contribution of phonon, surface-roughness at both interfaces, and Coulomb scattering has been considered. The mobility decrease that appears experimentally in devices with a silicon film thickness under 20 nm is satisfactorily explained by an increase in phonon scattering as a consequence of the greater confinement of the electrons in the silicon film.

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A comprehensive model for Coulomb scattering in inversion layers

Cited by 85 publications

References 34 publications

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation

Study of the effects of a stepped doping profile in short-channel MOSFETs

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

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