Accurate modeling of Metal/HfO2/Si capacitors

Abstract

In this work, we study the differences caused in the Capacitance-Voltage (C-V) characteristics of MOS devices when SiO 2 is replaced by HfO 2 as the gate dielectric. A self-consistent Schrödinger-Poisson solver has been developed to include the effects of quantum confinement and the influence of different parameters such as the effective mass, barrier height, and dielectric constant (κ) of the gate insulator material. Two different devices are considered: A Double Gate MOSFET and a Surrounding Gate Transistor. The validity of the Equivalent Oxide Thickness (EOT) is studied.

Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

“…The same trend is observed when the simple model is used with different thicknesses of the interfacial layer (SiO 2 ) to select suitable dielectrics (see figure 7). The tunneling electron effective mass in dielectric materials changes with the oxide thickness and voltage across the oxide materials [24] and the values reported in the literature vary over a wide range [27,28]. We have shown the role of electron effective mass values and their effect on the determination of suitable dielectrics.…”

Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

“…It was reported that the tunneling electron effective mass m 2 increases while the oxide thickness decreases [21]. Figure 8 shows the plots of band offset versus k for higher electron effective mass which can change in a wide range [22], and for two different values of interfacial layer thickness. It is obvious that the electron effective mass plays an important role and strongly affects the plots of band offset versus k values.…”