“…It appears that the rapid cool down from the high temperature plays a critical role in determining the defect concentration [75,78], possibly through a reduction in [O i ] [79]. This influence is supported by recent studies, which have shown that the fast-firing process used for the metallisation of industrial silicon solar cells can lead to a permanent reduction in the B-O defect concentration [73,[80][81][82]. Extended anneals at lower temperatures in the range of 400-700 • C can also reduce the B-O defect concentration probably through a reduction in the concentration of interstitial oxygen dimers [78,79]; however, extended annealing at sub-optimal conditions can also lead to an increase in the B-O defect concentration [72].…”