Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, Abdelkader; Khelfane, Amar

doi:10.1007/s11664-016-4769-x

Cited by 3 publications

(1 citation statement)

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“…It appears that the rapid cool down from the high temperature plays a critical role in determining the defect concentration [75,78], possibly through a reduction in [O i ] [79]. This influence is supported by recent studies, which have shown that the fast-firing process used for the metallisation of industrial silicon solar cells can lead to a permanent reduction in the B-O defect concentration [73,[80][81][82]. Extended anneals at lower temperatures in the range of 400-700 • C can also reduce the B-O defect concentration probably through a reduction in the concentration of interstitial oxygen dimers [78,79]; however, extended annealing at sub-optimal conditions can also lead to an increase in the B-O defect concentration [72].…”

Section: Thermal Processingmentioning

confidence: 84%

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

et al. 2017

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This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

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