Effect of Oxygen Incorporation of BHF Etch Rate of Plasma-Enhanced CVD Silicon Nitride Films Prepared in the Temperature Range 50–300°C

Abstract

The nuclear gross theory, originally formulated by Yamada (1969 Prog. Theor. Phys. 41 1470) for the β-decay, is applied to the electronic-neutrino nucleus reactions, employing a more realistic description of the energetics of the Gamow-Teller resonances. The model parameters are gauged from the most recent experimental data, both for β − -decay and electron capture, separately for even-even, even-odd, odd-odd and odd-even nuclei. The numerical estimates for neutrino-nucleus cross-sections agree fairly well with previous evaluations done within the framework of microscopic models. The formalism presented here can be extended to the heavy nuclei mass region, where weak processes are quite relevant, which is of astrophysical interest because of its applications in supernova explosive nucleosynthesis.

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

“…We infer that the conductivity of ARC depends on the Si-H and N-H bond densities, which change with the deposition conditions such as deposition temperature, gas ratio, and oxygen concentration. [29][30][31] Third, we investigated the effect of NH 3 plasma pretreatment. Figure 9 shows the V-Q characteristics of ARCs prepared with and without NH 3 plasma pretreatment, at the same RI of 2.11.…”

Investigation on antireflection coating for high resistance to potential-induced degradation

“…The film composition changes depending on the deposition condition, such as deposition temperature, pressure, and gas ratio. [25][26][27] The fixed charge density depends on the gas ratio. 28) Electrochemical corrosion means ARC corrosion and Na diffusion from cover glass into the silicon substrate through ARC.…”

“…Etching rate depends on oxygen concentration and deposition conditions, such as deposition temperature and gas ratio. [25][26][27][31][32][33]…”