The role of dangling bonds in the electronic and vibrational properties of hydrogenated amorphous silicon nitrides (a‐Si – xNx : H)

107

species in hydrates and simple oxides are rather well characterised from their IR, Raman and inelastic neutron points of view. For the H + (H 2 O) species in solid state the variability is well established and assignment remains discussed. The question of the vibrational signature of isolated proton (e.g. the ionic proton, a proton sharing its interaction with more than two acceptors) and its dynamic nature (proton gas, polaron,. . .) is open. H + -containing modified perovskites A(Ba,Sr,. . .) B(Zr,Ce,Ti,. . .) O 3 are potential ceramic membranes for fuel cell and medium temperature water electrolysis (300-800 • C). Comparison studies of the protonated and non-protonated lanthanide/rare earth-modified perovskites of type Ba(Sr)Zr(Ti)O 3 as well as Al-modified BaTiO 3 show that a broad component centred at 2500 cm −1 is observed after 'proton insertion'. Itsintensity is correlated to the protonic species content as well as to the conductivity of the materials. The mixed nature of this feature is discussed: fluorescence related to the dangling bonds, A, B, C bands or new phenomena related to the ionic protons and associated electronic defect.

Section: Broad 1000-4000 CM −1 Raman Featurementioning

confidence: 98%

Indirect Raman identification of the proton insertion in the high‐temperature [Ba/Sr][Zr/Ti]O₃‐modified perovskite protonic conductors

Slodczyk

Colomban

Willemin

et al. 2008

107

“…Furthermore, it has been reported that nitrogen doping can change the structural characteristics of the undoped Si : H thin films through the interaction with the hydrogen bonds of the films. [7] However, the use of Raman spectroscopy to study the influence of nitrogen doping on the structural evolution in P-doped n-type a-Si : H thin films is rarely reported.…”

Section: Introductionmentioning

confidence: 99%

Raman characterization of the structural evolution in amorphous and partially nanocrystalline hydrogenated silicon thin films prepared by PECVD

Jiang

et al. 2011

Hydrogenated silicon (Si : H) thin films were obtained by plasma-enhanced chemical vapor deposition (PECVD). Raman spectroscopy was used to investigate the structural evolution in phosphor-doped n-type amorphous hydrogenated silicon thin films, which were prepared under different substrate temperatures and gas pressures. Meanwhile, the effect of nitrogen doping on the structure of P-doped thin films was also investigated by Raman spectroscopy. Moreover, the transition from the amorphous state to the nanocrystalline state of undoped Si : H films deposited through low argon dilution was studied by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The results show that Raman spectroscopy can sensitively detect the structural evolution in hydrogenated silicon thin films deposited under different conditions in a PECVD system.

“…Finally, the role of dangling bonds in the electronic and vibrational properties of hydrogenated amorphous silicon nitrides (a-Si 1−x N x :H) was studied by Cataliotti and Compagnini. [178] Liquids and Liquid Interactions…”

Section: Glasses Ceramics and Disordered Materialsmentioning

confidence: 99%

Recent advances in linear and non‐linear Raman spectroscopy. Part III

Kiefer

2009

Following the first two reviews on recent advances in linear and non-linear Raman spectroscopy, the present review summarises papers mainly published in the Journal of Raman Spectroscopy during 2008. This again serves to give a brief overview of recent advances in this research field and to provide readers of this journal a quick introduction to the various sub-fields of Raman spectroscopy. It also reflects the current research interests and trends in the Raman community.