Experimental data are presented on the effects of varying deposition parameters of SiH4/NH3 gas flow ratio, rf power, deposition pressure and substrate temperature, on the deposition rate, refractive index, hydrogen content and etch rates of PECVD silicon nitride films. BHF etch rate in these films are generally high and this is shown to be associated with the high hydrogen content. N-H and Si-H bond concentrations are measured in the range 1-4×1022 cm-3. The substrate temperature dependence of the etch rate exhibits a maximum for films deposited at 150°C. The behaviour is attributed to the incorporation of both hydrogen and oxygen, the effects on the etch rate of which are suggested to act in opposing directions.
Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasmaenhanced chemical vapor deposition Effect of power on interface and electrical properties of SiO2 films produced by plasmaenhanced chemicalvapor deposition Electrical and structural properties of rapid thermally annealed borondoped silicon films deposited by plasma enhanced chemicalvapor deposition Experimental data are presented on the effects of varying deposition parameters of silanel ammonia fiow rate ratio, rf power, deposition pressure, and substrate temperature, on the resistivity and breakdown field, static and dynamic dielectric constants, activation energy, and barrier height, of plasma-enhanced chemical vapor deposition SiN films prepared in the temperature range 100-300 "C. Results show a strong dependence of the breakdown field and resistivity on rf power, the former increasing by a factor of 5 and the latter by 11 orders of magnitude, as power varies from 50 to 250 W. Current-voltage measurements favor a Frenkel-Poole conduction process, with a barrier height in the range 0.8-1.2 e V and an activation energy in the range 0.29-0.45 eV. Annealing in nitrogen at 400·C leads to a decrease in film resistivity. This is attributed to the loss of hydrogen, incorporated as Si-H and N-H bonds in the film. The decrease in positively charged dangling bonds is supported by the resulting shift in the fiat-band voltage on a metal-insulator semiconductor structure. Partial recovery of film resistivity has been demonstrated through further annealing in hydrogen. Polarization and trapping instabilities in the capacitance-voltage measurements have also been observed.
The nuclear gross theory, originally formulated by Yamada (1969 Prog. Theor. Phys. 41 1470) for the β-decay, is applied to the electronic-neutrino nucleus reactions, employing a more realistic description of the energetics of the Gamow-Teller resonances. The model parameters are gauged from the most recent experimental data, both for β − -decay and electron capture, separately for even-even, even-odd, odd-odd and odd-even nuclei. The numerical estimates for neutrino-nucleus cross-sections agree fairly well with previous evaluations done within the framework of microscopic models. The formalism presented here can be extended to the heavy nuclei mass region, where weak processes are quite relevant, which is of astrophysical interest because of its applications in supernova explosive nucleosynthesis.
In this paper, we demonstrate a novel low temperature nanofabrication approach that enables the formation of ultra-sharp high aspect ratio (HAR) and high density nanotip structures and their integration onto nanoscale cantilever beams. The nanotip structure consists of a nanoscale thermally evaporated Cr Spindt tip on top of an amorphous silicon rod. An apex radius of the tip, as small as 2.5 nm, has been achieved, and is significantly smaller than any other Spindt tips reported so far. 100 nm wide tips with aspect ratio of more than 50 and tip density of more than 5 × 10 tips cm have been fabricated. The HAR tips have been integrated onto an array of 460 nm wide cantilever beams with high precision and yield. In comparison with other approaches, this approach allows the integration of HAR sharp nanotips with nano-mechanical structures in a parallel and CMOS compatible fashion for the first time to our knowledge. Potential applications include on-chip high-speed atomic force microscopy and field emission devices.
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